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Model system for controlling strain in silicon at the atomic scale

机译：用于控制原子级硅应变的模型系统

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摘要

Strain induced by antiphase boundaries (APBs) in the Si(l 11)2 x 1 surface is investigated using scanning tunneling microscopy (STM), laterally resolved scanning tunneling spectroscopy (STS), and density functional theory (DFT). We determine the structure of all identified APB reconstructions and show that a band shift of states close to the Fermi energy leads to the previously observed electronic contrast. The orientation of the band shift and the observed movement of APBs within the surface are explained by surface strain resulting from the excess free energy of the boundary. We demonstrate that the location of APBs and their associated strain can be precisely manipulated, making them an ideal model system to study and control strain at the atomic scale.
机译：使用扫描隧道显微镜（STM），横向分辨扫描隧道光谱（STS）和密度泛函理论（DFT）研究了Si（11）2 x 1表面中由反相边界（APB）引起的应变。我们确定所有已确定的APB重建的结构，并表明接近费米能量的状态的能带位移会导致先前观察到的电子对比度。带隙的取向和表面中APB的观察到的运动是由边界的多余自由能产生的表面应变解释的。我们证明，APB及其相关应变的位置可以精确地控制，使其成为研究和控制原子尺度应变的理想模型系统。

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  • 来源
    《Physical review》 |2011年第4期|p.041306.1-041306.5|共5页
  • 作者

    Philipp Studer; Steven R. Schofield; Greg Lever; David R. Bowler; Cyrus F. Hirjibehedin; Neil J. Curson;

  • 作者单位

    London Centre for Nanotechnology, UCL, London, WC1H0AH, United Kingdom,Department of Electronic and Electrical Engineering, UCL, London, WC1E 7JE, United Kingdom;

    London Centre for Nanotechnology, UCL, London, WC1H0AH, United Kingdom,Department of Physics and Astronomy, UCL, London, WC1E 6BT, United Kingdom;

    Department of Physics and Astronomy, UCL, London, WC1E 6BT, United Kingdom;

    London Centre for Nanotechnology, UCL, London, WC1H0AH, United Kingdom,Department of Physics and Astronomy, UCL, London, WC1E 6BT, United Kingdom;

    London Centre for Nanotechnology, UCL, London, WC1H0AH, United Kingdom,Department of Physics and Astronomy, UCL, London, WC1E 6BT, United Kingdom,Department of Chemistry, UCL, London, WC1H 0AJ, United Kingdom;

    London Centre for Nanotechnology, UCL, London, WC1H0AH, United Kingdom,Department of Electronic and Electrical Engineering, UCL, London, WC1E 7JE, United Kingdom;

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