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Nonexponential relaxation dynamics of localized carrier densities in oxide crystals without structural or energetic disorder

机译:无结构或高能无​​序的氧化物晶体中局部载流子密度的非指数弛豫动力学

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摘要

A microscopic model for the nonexponential relaxation of localized-charge carrier densities in oxide crystals is derived by taking into account thermally activated diffusive hopping transport and the effect of trap saturation. Thereby it is shown that the relaxation, commonly described by a stretched-exponential function, can be successfully reconstructed without consideration of a structural or energetic disorder. Furthermore, the access to particular microscopic measures such as the lifetime of single hopping events and localized-carrier densities is enabled. The impact of the model approach valid for various complex relaxation processes is demonstrated with the nonexponential relaxation dynamics of optically generated small bound polaron densities experimentally determined in KNbO_3 as an example.
机译:通过考虑热激活的扩散跳跃传输和陷阱饱和的影响,得出了氧化物晶体中局部电荷载流子密度的非指数松弛的微观模型。从而表明,通常用拉伸指数函数描述的松弛可以在不考虑结构或能量紊乱的情况下成功地重建。此外,还可以访问特定的微观测量方法,例如单跳事件的寿命和局部载波密度。以在KNbO_3中实验确定的光学生成的小束缚极化子密度的非指数弛豫动力学为例,说明了适用于各种复杂弛豫过程的模型方法的影响。

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