...
首页> 外文期刊>Physical review >Surface edge state and half-quantized Hall conductance in topological insulators
【24h】

Surface edge state and half-quantized Hall conductance in topological insulators

机译:拓扑绝缘体的表面边缘状态和半量化霍尔电导

获取原文
获取原文并翻译 | 示例
           

摘要

We study the surface local density of states and the transport properties of a three-dimensional (3D) topological insulator (TI) in the presence of a uniform spin-splitting Zeeman field. We find chiral edge states exist on the g apped surfaces of the 3D TI, which can be considered as interface states between domains of massive and massless Dirac fermions. Effectively these states are the result of splitting of a perfect interface conducting channel. This picture is confirmed by the Landauer-Biittiker calculations in four-terminal Hall bars made of 3D TIs. It is demonstrated that the difference between the clockwise and counterclockwise transmission coefficients of the two neighboring terminals is approximately one-half, which suggests that the half-quantized Hall conductance can be manifested in an appropriate experimental setup. We also predict that the quantized anomalous Hall effect exists in thin films of TIs where such effective Zeeman felds are present.
机译:我们研究存在均匀自旋分裂塞曼场的情况下表面的局部状态密度和三维(3D)拓扑绝缘体(TI)的传输特性。我们发现3D TI的间隙表面上存在手性边缘态,这可以看作是大量和无质量狄拉克费米子域之间的界面状态。实际上,这些状态是完美的界面传导通道分裂的结果。 Landauer-Biittiker在3D TI制成的四端子霍尔棒中的计算结果证实了这张照片。结果表明,两个相邻端子的顺时针和逆时针传输系数之间的差约为一半,这表明半量化的霍尔电导可以在适当的实验设置中体现出来。我们还预测,存在这种有效的塞曼长场的TI薄膜中存在量化的异常霍尔效应。

著录项

  • 来源
    《Physical review》 |2011年第8期|p.085312.1-085312.5|共5页
  • 作者单位

    Department of Physics and Center of Computational and Theoretical Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

    International Center for Quantum Materials, Peking University, Beijing 100871, China;

    Department of Physics and Center of Computational and Theoretical Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electron states at surfaces and interfaces; quantum hall effects;

    机译:表面和界面的电子态;量子霍尔效应;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号