Tunable graphene band gaps from superstrate-mediated interactions

J. P. Hague

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Tunable graphene band gaps from superstrate-mediated interactions

机译：上层介导的相互作用可调节的石墨烯带隙

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A theory is presented for the strong enhancement of graphene-on-substrate band gaps by attractive interactions mediated through phonons in a polarizable superstrate. It is demonstrated that gaps of up to 1 eV can be formed for experimentally achievable values of electron-phonon coupling and phonon frequency. Gap enhancements range between factors of 1 to 4, indicating possible benefits to graphene electronics through greater band-gap control for digital applications, lasers, light-emitting diodes, and photovoltaics through the relatively simple application of polarizable materials such as SiO_2 and Si_3N_4.

机译：提出了一种通过可极化的上层基板中通过声子介导的有吸引力的相互作用来强烈增强基板上石墨烯的带隙的理论。已经证明，对于电子声子耦合和声子频率的实验上可达到的值，可以形成高达1 eV的间隙。间隙增强在1-4的范围内，表明通过对数字化应用，激光，发光二极管和光伏发电的更大带隙控制，通过相对简单地应用可极化材料（例如SiO_2和Si_3N_4），可以为石墨烯电子学带来好处。

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《Physical review》 |2011年第15期|p.155438.1-155438.5|共5页
作者
J. P. Hague;
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Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes, MK7 6AA, United Kingdom;

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Tunable graphene band gaps from superstrate-mediated interactions

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