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首页> 外文期刊>Physical review >Electrical control of ferromagnetism and bias anomaly in Mn-doped semiconductor heterostructures
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Electrical control of ferromagnetism and bias anomaly in Mn-doped semiconductor heterostructures

机译：Mn掺杂半导体异质结构中铁磁性和偏置异常的电控制

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摘要

The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for disorder in the Mn-doped regions and unwanted spin flips at heterointerfaces on phenomenological ground. We find that the magnetization in GaMnAs layers can be controlled by an external electric bias. The underlying mechanism is identified as spin-selective hole tunneling in and out of the Mn-doped quantum wells, whereby the applied bias determines both hole population and spin polarization in these layers. In particular, we predict that, near resonance, ferromagnetic order in the Mn-doped quantum wells is destroyed. The interplay of both magnetic and transport properties combined with structural design potentially leads to several interrelated physical phenomena, such as dynamic spin filtering, tunneling-induced bias anomaly, electrical control of magnetization in individual magnetic layers, and, under specific bias conditions, to self-sustained current and magnetization oscillations (magnetic multistability). Relevance to recent experimental results is discussed.
机译：在自洽格林函数方法中研究了包含GaMnAs层的狭窄半导体多量子阱结构中隧道传输和载流子介导的铁磁性的相互作用，这解释了Mn掺杂区的无序现象和现象学上异质界面上的有害自旋翻转地面。我们发现，GaMnAs层中的磁化强度可以通过外部电偏压来控制。潜在的机理被确定为自旋选择性空穴隧穿进出锰掺杂的量子阱，由此施加的偏压决定了这些层中的空穴总数和自旋极化。特别地，我们预测，在共振附近，掺杂Mn的量子阱中的铁磁有序被破坏。磁性能和输运性能的相互作用以及结构设计可能会导致多种相互关联的物理现象，例如动态自旋滤波，隧穿引起的偏置异常，各个磁层中磁化的电控制以及在特定偏置条件下的自相关-持续的电流和磁化振荡（磁多稳定性）。讨论与最近的实验结果有关。

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