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Pressure-induced metallization of BaMn_2As_2

机译：BaMn_2As_2的压力诱导金属化

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摘要

Temperature- and pressure-dependent electrical resistivity [(pT,P)] studies have been performed on BaMn_2As_2 single crystal in the 4.2-300 K range up to 8.2 GPa in order to investigate the evolution of its ground state properties. p(T) data show negative coefficients of resistivity up to a pressure of 3.2 GPa. At a pressure of ～4.5 GPa an insulator-to-metal transition is seen to occur at ～36 K, as indicated by a change in the temperature coefficient of the p(T). However, at a pressure of ~5.8 GPa the sample is metallic in the entire temperature range. X-ray diffraction studies performed as a function of pressure, at room temperature, also show an anomaly in the pressure versus volume curve around P ≈ 5 GPa without a change in crystal structure, indicative of an electronic transition in support of the resistivity results. In addition to metallization, a clear precipitous drop in p(T) is seen at ～17 K for P ≥ 5.8 GPa.
机译：为了研究BaMn_2As_2单晶在4.2-300 K范围内（最高8.2 GPa）的温度和压力，其电阻率[（pT，P）]研究是为了研究其基态特性的演变。 p（T）数据显示了压力高达3.2 GPa时的负电阻率系数。如p（T）的温度系数变化所示，在〜4.5 GPa的压力下，在〜36 K处会发生绝缘体到金属的转变。但是，在〜5.8 GPa的压力下，样品在整个温度范围内都是金属。在室温下根据压力进行的X射线衍射研究还显示，压力与体积的关系曲线在P≈5 GPa附近出现异常，而晶体结构没有变化，这表明存在支持电阻率结果的电子跃迁。除金属化外，当P≥5.8 GPa时，在约17 K时p（T）明显下降。

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  • 来源
    《Physical review》 |2011年第18期|p.180515.1-180515.5|共5页
  • 作者

    A. T. Satya; Awadhesh Mani; A. Arulraj; N. V. Chandra Shekar; K. Vinod; C. S. Sundar; A. Bharathi;

  • 作者单位

    Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

    Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

    Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

    Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

    Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

    Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

    Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

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  • 正文语种 eng
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  • 关键词

    pressure effects; antiferromagnetics; occurrence, potential candidates;

    机译：压力影响;反铁磁发生;潜在的候选人;

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