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Strain and charge carrier coupling in epitaxial graphene

机译：外延石墨烯中的应变和载流子耦合

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摘要

We report a striking coupling between strain and carrier concentration variations at micrometer scale in single-layer graphene grown on silicon carbide (SiC) (0001). The in-plane compressive strain (up to 0.4%) and carrier concentration are probed using Raman spectroscopy. We show that the large strain inhomogeneities in graphene initiate at the growth stage and develop further by strain relaxation along the mismatched symmetry axes of the graphene and the underlying substrate. The strain relaxation is accompanied by a locally larger electron concentration, suggesting that charge transfer reduces the strain energy in the overall system. Our work establishes the strain and doping variations as coupled, intrinsic properties of epitaxial graphene growth on SiC(0001).
机译：我们报道了在碳化硅（SiC）（0001）上生长的单层石墨烯中微米级的应变和载流子浓度变化之间的惊人耦合。使用拉曼光谱法探测面内压缩应变（最高0.4％）和载流子浓度。我们表明，石墨烯中的大应变不均匀性始于生长阶段，并通过沿着石墨烯和下层基底的不匹配对称轴的应变松弛而进一步发展。应变松弛伴随着局部更大的电子浓度，这表明电荷转移降低了整个系统的应变能。我们的工作将应变和掺杂变化确定为SiC（0001）上外延石墨烯生长的耦合固有特性。

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