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Topological transition in Bi_(1-x)Sb_x studied as a function of Sb doping

机译:Bi_(1-x)Sb_x中的拓扑跃迁研究为Sb掺杂的函数

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摘要

Spin- and angle-resolved photoemission spectroscopy measurements were performed on Bi_(1-x)Sb_x samples at x = 0.04, 0.07, and 0.21 to study the change of the surface band structure from nontopological to topological. Energy shift of the T and L_s bulk bands with Sb concentration is quantitatively evaluated. An edge state becomes topologically nontrivial at x = 0.04. An additional trivial edge state appears at the L band gap that forms at x > 0.04 and apparently hybridize with the nontrivial edge state. A scenario for the topological transition mechanism is presented. Related issues of self-energy and temperature dependence of the surface state are also considered.
机译:对Bi_(1-x)Sb_x样品在x = 0.04、0.07和0.21上进行了自旋和角度分辨光发射光谱测量,以研究表面带结构从非拓扑到拓扑的变化。定量评估了T和L_s体带随Sb浓度的能量转移。在x = 0.04时,边缘状态在拓扑上变得无关紧要。在x> 0.04处形成的L带隙处出现了另外一个琐碎的边缘状态,并且显然与非琐碎的边缘状态杂交。提出了拓扑过渡机制的方案。还考虑了表面状态的自能量和温度依赖性的相关问题。

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  • 来源
    《Physical review》 |2011年第23期|p.235308.1-235308.8|共8页
  • 作者单位

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Faculty of Science and Technology, Keio University, Yokohama, Kanagawa 223-8522, Japan;

    Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institut des Nanosciences de Paris, Universite Pierre et Marie Curie-Paris 6, CNRS-UMR 7588, 4place Jussieu, F-75252 Paris, France;

    Cassiopee Beamline, synchrotron SOLEIL/CNRS, BP 48, F-91192 Gif-Sur-Yvette, France;

    Cassiopee Beamline, synchrotron SOLEIL/CNRS, BP 48, F-91192 Gif-Sur-Yvette, France;

    Cassiopee Beamline, synchrotron SOLEIL/CNRS, BP 48, F-91192 Gif-Sur-Yvette, France;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan;

    Faculty of Science and Technology, Keio University, Yokohama, Kanagawa 223-8522, Japan;

    Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    electron states at surfaces and interfaces; photoemission and photoelectron spectra;

    机译:表面和界面的电子态;光发射和光电子能谱;

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