Direct measurement of electron channeling in a crystal using scanning transmission electron microscopy

著录项

• 来源
  《Physical review》 |2011年第7ptab期|p.075485.1-075485.7|共7页
• 作者

  L. Fitting Kourkoutis; M. K. Parker; V. Vaithyanathan; D. G. Schlom; D. A. Muller;

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• 作者单位

  School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA;

  School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA;

  Department of Material Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802-5055, USA;

  Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA;

  School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  transmission electron microscopy (tem) (including stem; hrtem; etc.); thin film structure and morphology; channeling phenomena (blocking; energy loss; etc.);

  机译：透射电子显微镜（tem）（包括茎;hrtem等）;薄膜结构和形态;通道现象（阻塞;能量损失;等）;