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首页> 外文期刊>Physical review >Co/Pt perpendicular antidot arrays with engineered feature size and magnetic properties fabricated on anodic aluminum oxide templates
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Co/Pt perpendicular antidot arrays with engineered feature size and magnetic properties fabricated on anodic aluminum oxide templates

机译:在阳极氧化铝模板上制造的具有工程特征尺寸和磁性的Co / Pt垂直解毒剂阵列

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摘要

Antidot arrays with perpendicular anisotropy have been fabricated by depositing Co/Pt multilayers on the anodic aluminum oxide (AAO) templates prepared on Si wafers. The antidot arrays cover an area of about 10 cm~2. The antidot size (D) and edge-to-edge (w) separation between two adjacent antidots are varied over a wide range from 7 to 46 nm and 14 to 53 nm, respectively. The magnetic properties and magnetization process exhibit strong dependence on the antidot size and separation. The perpendicular coercivity (H_c) increases from 140 Oe (continuous film) with the increase in D and shows a peak at about 1350 Oe for the D of around 30 nm. The H_c starts to decrease for the further increase in D due to the deteriorated perpendicular anisotropy. The magnetization reversal of the antidot arrays with D of 30 nm or less is governed by the strong domain-wall pinning and the switching field shows less sensitivity to the angular variation from the easy axis. The magnetic domain size decreases with increase in D. The evolutions of magnetic properties are ascribed to the pinning effects imposed by the AAO pores. The influence of antidot size on the pinning of domain wall, H_c and magnetization switching characteristics are also investigated by the micromagnetic modeling.
机译:通过将Co / Pt多层膜沉积在Si晶片上制备的阳极氧化铝(AAO)模板上,可以制造出具有垂直各向异性的Antidot阵列。解毒剂阵列覆盖约10 cm〜2的面积。两个相邻的防污点之间的防污点尺寸(D)和边缘到边缘(w)的间距分别在7至46 nm和14至53 nm的宽范围内变化。磁性和磁化过程表现出对解毒剂尺寸和分离的强烈依赖性。随着D的增加,垂直矫顽力(H_c)从140 Oe(连续膜)增加,并且对于约30nm的D在约1350Oe处显示峰值。由于垂直各向异性变差,D的进一步增加,H_c开始下降。 D小于或等于30 nm的解毒剂阵列的磁化反转由强畴壁钉扎控制,并且开关磁场对来自易轴的角度变化的灵敏度较低。磁畴尺寸随D的增加而减小。磁性的演变归因于AAO孔施加的钉扎效应。还通过微磁模型研究了解毒剂大小对畴壁钉扎,H_c和磁化转换特性的影响。

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  • 来源
    《Physical review》 |2010年第1期|014418.1-014418.7|共7页
  • 作者单位

    Materials Science and Engineering Department, National Tsing Hua University, Hsinchu, Taiwan Electrical and Computer Engineering Department, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, Minneapolis, MN 55455, USA;

    Materials Science and Engineering Department, National Tsing Hua University, Hsinchu, Taiwan;

    Materials Science and Engineering Department, National Tsing Hua University, Hsinchu, Taiwan;

    Solid State Physics Department, Vienna University of Technology, Vienna, Austria;

    Solid State Physics Department, Vienna University of Technology, Vienna, Austria;

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  • 正文语种 eng
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  • 关键词

    nanoscale materials and structures: fabrication and characterization; magnetic recording materials; magnetization reversal mechanisms;

    机译:纳米级材料和结构:制造和表征;磁记录材料;磁化反转机制;

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