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Backaction of a charge detector on a double quantum dot

机译:电荷检测器在双量子点上的反作用

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摘要

We develop a master equation approach to study the backaction of quantum-point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exceeds a threshold value determined by the eigenstate energy difference in the DQD. This derived excitation condition agrees well with experiments on QPC-induced inelastic electron tunneling through a DQD [S. Gustavsson et al., Phys. Rev. Lett. 99, 206804 (2007)]. Moreover, we propose a scheme to generate a pure spin current by the QPC in the absence of a charge current.
机译:我们开发了一个主方程方法来研究零偏置电压下双点量子点(DQD)上的量子点接触(QPC)的反作用。我们揭示了为什么只有当QPC两端的偏置电压超过DQD中本征态能量差确定的阈值时,电子才能通过零偏DQD。这种推导的激发条件与QPC诱导的通过DQD的非弹性电子隧穿实验[S. Gustavsson等,Phys。牧师99,206804(2007)]。此外,我们提出了一种在没有充电电流的情况下由QPC产生纯自旋电流的方案。

著录项

  • 来源
    《Physical review》 |2010年第7期|p.075301.1-075301.6|共6页
  • 作者单位

    Department of Applied Physics, Hong Kong Polytechnic University, Hung Horn, Hong Kong, China Department of Physics and Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China;

    Department of Applied Physics, Hong Kong Polytechnic University, Hung Horn, Hong Kong, China;

    Department of Physics and Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum dots; current-driven spin pumping; coulomb blockade; single-electron tunneling;

    机译:量子点;电流驱动的自旋泵浦;库仑封锁;单电子隧穿;

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