Direct observation of the dispersion and relaxation of photoexcited electrons in InAs

Junpei Azuma; Kazutoshi Takahashi; Masao Kamada

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Direct observation of the dispersion and relaxation of photoexcited electrons in InAs

机译：直接观察InAs中光激发电子的分散和弛豫

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Time- and angle-resolved photoemission spectroscopy has been applied to the excited state in n-type InAs. The electrons populated by the direct optical transition were clearly observed in the middle of the conduction band. The relaxation of the photoexcited electrons was also observed along the dispersion of the lowest conduction band on the ∑ line. The nonequilibrium electron distribution on the relaxation was found within 1 ps.

机译：时间和角度分辨光发射光谱已应用于n型InAs的激发态。在导带的中间清楚地观察到由直接光学跃迁构成的电子。还沿着∑线上最低导带的分散观察到光激发电子的弛豫。在1 ps内发现弛豫的非平衡电子分布。

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来源
《Physical review》 |2010年第11期|p.113203.1-113203.4|共4页
作者
Junpei Azuma; Kazutoshi Takahashi; Masao Kamada;
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作者单位

Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan;

rnSynchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan;

rnSynchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan;

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charge carriers: generation, recombination, lifetime, and trapping; semiconductor compounds; excitons and related phenomena;

机译：电荷载体：产生;重组;寿命和捕获;半导体化合物激子及相关现象;

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1. Intraband relaxation of photoexcited electrons in GaAs/AlGaAs quantum wells and InAs/GaAs self-assembled quantum dots [J] . T Mueller, W Parz, F F Schrey, Semiconductor science and technology . 2004,第4期

机译：GaAs / AlGaAs量子阱和InAs / GaAs自组装量子点中光激发电子的带内弛豫
2. Relaxation of femtosecond photoexcited electrons in a polar indirect band-gap semiconductor nanoparticle [J] . NAVINDER SINGH Pramana . 2005,第1期

机译：飞秒光激发电子在极性间接带隙半导体纳米粒子中的弛豫
3. Relaxation of femtosecond photoexcited electrons in a polar indirect band-gap semiconductor nanoparticle [J] . Navinder Singh Pramana . 2005,第1期

机译：飞秒光激发电子在极性间接带隙半导体纳米粒子中的弛豫
4. Direct observation of electron-hole recombination kinetics in photoexcited semiconductor nanoparticles by ultrafast laser spectroscopy [C] . Shigeru Ikeda, Bunsho Ohtani The Third SANKEN international symposium on advanced nanoelectronics : Devices, materials, and computing . 2000

机译：超快激光光谱法直接观察光激发半导体纳米粒子中的电子-空穴复合动力学
5. Theoretical studies of electron dynamics and relaxation in photoexcited quantum well structures [D] . Educato, James Louis 1993

机译：光激发量子阱结构中电子动力学和弛豫的理论研究
6. Electron Spin Relaxation of Photoexcited Porphyrin in Water—Glycerol Glass [O] . Natalya Sannikova, Ivan Timofeev, Elena Bagryanskaya, 2020

机译：水中的光激发卟啉的电子自旋弛豫
7. Ultrafast Relaxation Dynamics of Photoexcited Heme Model Compounds: Observation of Multiple Electronic Spin States and Vibrational Cooling [O] . -1

机译：光孔血红素模型化合物的超快放松动态：多种电子旋转状态观察和振动冷却
8. Electron-Electron Scattering Modifications of Intervalley Transition Rates and Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs. [R] . Kann, M. J., Kriman, A. M., Ferry, D. K. 1989

机译：Gaas中热光激发载流子的Intervalley跃迁速率和超快弛豫的电子 - 电子散射修正。

Direct observation of the dispersion and relaxation of photoexcited electrons in InAs

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