Direct measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arrays

A. F. Zinovieva; A. V. Dvurechenskii; N. P. Stepina; A. I. Nikiforov; A. S. Lyubin; L. V. Kulik

首页> 外文期刊>Physical review >Direct measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arrays

【24h】

Direct measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arrays

机译：隧道耦合Ge / Si量子点阵列中电子自旋弛豫时间的直接测量

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Electron paramagnetic resonance and spin-echo methods are used to probe the spin dynamics in Ge/Si heterostructures with quantum dots. A spin coherence time of up to 20 μs is obtained for electrons confined in strain-induced Si potential wells near the apices of Ge quantum dots. The measurements of spin echo confirm the model of spin relaxation through the spin precession in the effective magnetic field lying in the plane of a quantum dot array. Existence of two electron groups with different spin-relaxation times is suggested to explain a nonexponential spin-echo behavior observed in the structures under study.

机译：电子顺磁共振和自旋回波方法用于探测具有量子点的Ge / Si异质结构中的自旋动力学。对于局限在Ge量子点顶点附近的应变感应Si势阱中的电子而言，自旋相干时间可达20μs。自旋回波的测量结果证实了在量子点阵列平面内有效磁场中自旋进动的自旋弛豫模型。建议使用两个具有不同自旋弛豫时间的电子基团来解释在研究结构中观察到的非指数自旋回波行为。

著录项

来源
《Physical review》 |2010年第11期|p.113303.1-113303.4|共4页
作者
A. F. Zinovieva; A. V. Dvurechenskii; N. P. Stepina; A. I. Nikiforov; A. S. Lyubin; L. V. Kulik;
展开▼
作者单位

Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia;

rnInstitute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia;

rnInstitute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia;

rnInstitute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia;

rnInstitute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia;

rnInstitute of Chemical Kinetics and Combustion, SB RAS, 630090 Novosibirsk, Russia;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
quantum dots; quantum computation; spin relaxation and scattering;

机译：量子点;量子计算自旋弛豫和散射;

相似文献

外文文献
中文文献
专利

1. Electron spins in an array of tunnel-coupled quantum dots [J] . Dvurechenskii A.V., Zinovieva A.F., Nenashev A.V. Bulletin of the Russian Academy of Sciences. Physics . 2012,第2期

机译：电子在隧道耦合量子点的阵列中自旋
2. Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot [J] . M. Xiao, M. G. House, H. W. Jiang Physical review letters . 2010,第9期

机译：硅金属氧化物半导体量子点中单电子自旋弛豫时间的测量
3. Effect of screening on slow relaxation of excess conductance in two-dimensional array of tunnel-coupled quantum dots [J] . N. P. Stepina, E. C. Koptev, A. V. Nenashev, Physica status solidi . 2008,第3期

机译：屏蔽对隧道耦合量子点二维阵列中超导慢弛豫的影响
4. Measurement of electron spin relaxation in charged GaAs quantum dots: Application of nonlinear optical phase-modulation spectroscopy [C] . Quantum Electronics and Laser Science Conference;Conference on Lasers and Electro-Optics . 2006

机译：电荷GaAs量子点中电子自旋弛豫的测量：非线性光学相位调制光谱的应用
5. The entanglement and spin relaxation of electrons in quantum dots and resistance anomaly of nanowires [D] . Yin, Sun. 2006

机译：量子点中电子的纠缠和自旋弛豫以及纳米线的电阻异常
6. A Two-Dimensional Electron Gas as a Sensitive Detector for Time-Resolved Tunneling Measurements on Self-Assembled Quantum Dots [O] . Martin Geller, Bastian Marquardt, Axel Lorke, 2010

机译：二维电子气作为自组装量子点上时间分辨隧穿测量的灵敏检测器
7. Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot [O] . M. Xiao, M. G. House, H. W. Jiang 2010

机译：在硅金属氧化物半导体类量子点中测量单电子中的单一电子的旋转弛豫时间
8. Spontaneous spin polarization of electrons in two-dimensional arrays of quantum dots: Possibilities for a novel quantum coupled computer architecture [R] . Bandyopadhyay, S, Das, B, Miller, A E, 1994

机译：二维量子点阵列中电子的自发自旋极化：一种新型量子耦合计算机体系结构的可能性

Direct measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arrays

摘要

著录项

相似文献

相关主题

期刊订阅