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Strongly correlated metal interfaces in the Gutzwiller approximation

机译：Gutzwiller近似中的强相关金属界面

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摘要

We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various geometries, including vacuum-metal-vacuum, a junction between a weakly and a strongly correlated metal, and finally the double junctions metal-Mott insulator-metal and metal-strongly correlated metal-metal. We apply the self-consistent Gutzwiller technique recently developed in our group, whose approximate nature is compensated by an extreme flexibility, ability to treat very large systems, and physical transparency. The main general result is a clear characterization of the position-dependent metallic quasipar-ticle spectral weight. Its behavior at interfaces reveals the ubiquitous presence of exponential decays and crossovers with decay lengths of clear physical significance. The decay length of the metallic strength in a weakly-strongly correlated metal interface is due to poor screening in the strongly correlated side. That from a metal into a Mott insulator is due to tunneling. In both cases, the decay length is a bulk property and diverges with a critical exponent (～1/2 in the present approximation, mean field in character) as the (continuous, paramagnetic) Mott transition is approached.
机译：我们研究了空间不均匀性对强相关电子系统的物理效应的影响，该系统表现出金属相和莫特绝缘相，用简单的哈伯德模型表示。在三个维度上，我们考虑了各种几何形状，包括真空-金属-真空，弱关联和强关联的金属之间的结，最后是金属-莫特绝缘体-金属和金属强关联的金属-金属的双结。我们应用了我们小组中最近开发的自洽Gutzwiller技术，该技术的近似性质由极高的灵活性，处理非常大的系统的能力和物理透明性所补偿。主要的一般结果是清楚地表征了位置相关的金属准粒子光谱重量。它在界面处的行为揭示了普遍存在的指数衰减和交叉现象，其衰减长度具有明显的物理意义。弱相关性强的金属界面中金属强度的衰减长度归因于强相关性侧的不良筛选。从金属到莫特绝缘子的绝缘是由于隧穿。在这两种情况下，随着接近（连续，顺磁）莫特跃迁，衰变长度是一个整体性质，并以临界指数（在当前近似值约为1/2，在特性上为平均场）发散。

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  • 来源
    《Physical review》 |2010年第11期|p.115134.1-115134.10|共10页
  • 作者

    Giovanni Borghi; Michele Fabrizio; Erio Tosatti;

  • 作者单位

    International School for Advanced Studies (SISSA), and CRS DEMOCRITOS, CNR-INFM, Via Beirut 2-4, I-34151 Trieste, Italy;

    rnInternational School for Advanced Studies (SISSA), and CRS DEMOCRITOS, CNR-INFM, Via Beirut 2-4, I-34151 Trieste, Italy The Abdus Salam International Centre for Theoretical Physics (ICTP), P.O. Box 586, I-34151 Trieste, Italy;

    rnInternational School for Advanced Studies (SISSA), and CRS DEMOCRITOS, CNR-INFM, Via Beirut 2-4, I-34151 Trieste, Italy The Abdus Salam International Centre for Theoretical Physics (ICTP), P.O. Box 586, I-34151 Trieste, Italy;

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  • 正文语种 eng
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  • 关键词

    electron states at surfaces and interfaces; lattice fermion models (hubbard model, etc.); metal-insulator transitions and other electronic transitions;

    机译：表面和界面的电子态;格子费米子模型（哈伯德模型等）;金属绝缘体过渡和其他电子过渡;

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