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首页> 外文期刊>Physical review >High-temperature ferromagnetism in epitaxial (In,Mn)Sb films
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High-temperature ferromagnetism in epitaxial (In,Mn)Sb films

机译：（In，Mn）Sb外延膜中的高温铁磁性

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摘要

We report ferromagnetism in single phase, epitaxial In_(1-x)Mn_xSb alloy films, with x≤0.035, grown by metalorganic vapor phase epitaxy. The alloy films exhibit well-defined magnetization versus magnetic field hysteresis loops from 4-298 K. High-field magnetotransport measurements indicated that the Hall resistivity has a nonlinear dependence on magnetic field. Ferromagnetism is supported by observation of an anomalous Hall effect and clear hysteresis in the anomalous Hall resistivity versus magnetic field measurements. Zero field cooled and field cooled magnetization measurements show reversibility indicating absence of second phase precipitates. The temperature dependence of the magnetization is described by a modified Brillouin function with a T_C of 590 K. The observed magnetic and magnetotransport properties are attributed to carrier mediated ferromagnetism involving Mn and its complexes that form shallow or resonant electronic states through correlated substitution in the semiconductor host.
机译：我们报道了通过金属有机气相外延生长的单相外延In_（1-x）Mn_xSb合金薄膜中的铁磁性，x≤0.035。合金膜在4-298 K的范围内表现出清晰的磁化强度与磁场磁滞回线。高场磁传输测量表明，霍尔电阻率对磁场具有非线性依赖性。通过观察异常霍尔效应和在异常霍尔电阻率与磁场测量结果之间的清晰磁滞现象，可以支持铁磁性。零磁场冷却和磁场冷却的磁化强度测量结果显示可逆性，表明不存在第二相沉淀。磁化强度的温度依赖性通过修改的布里渊函数（T_C为590 K）来描述。观察到的磁和磁输运性质归因于载流子介导的铁磁性，涉及锰及其配合物，它们通过半导体中的相关取代形成浅或共振电子态主办。

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  • 来源
    《Physical review》 |2010年第11期|p.115321.1-115321.6|共6页
  • 作者

    N. D. Parashar; N. Rangaraju; V. K. Lazarov; S. Xie; B. W. Wessels;

  • 作者单位

    Department of Materials Science and Engineering and Materials Research Center, Northwestern University,Evanston, Illinois 60208, USA;

    rnDepartment of Materials Science and Engineering and Materials Research Center, Northwestern University,Evanston, Illinois 60208, USA;

    rnDepartment of Physics, University of York, Heslington YO10 5DD, United Kingdom;

    rnDepartment of Materials Science and Engineering and Materials Research Center, Northwestern University,Evanston, Illinois 60208, USA;

    rnDepartment of Materials Science and Engineering and Materials Research Center, Northwestern University,Evanston, Illinois 60208, USA;

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  • 关键词

    Ⅲ-Ⅴ semiconductors; magnetic semiconductors; Ⅲ-Ⅴ semiconductors;

    机译：Ⅲ-Ⅴ族半导体;磁性半导体Ⅲ-Ⅴ族半导体;

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