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首页> 外文期刊>Physical review >Energy transfer from an electron-hole plasma layer to a quantum well in semiconductor structures
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Energy transfer from an electron-hole plasma layer to a quantum well in semiconductor structures

机译：能量从电子空穴等离子体层转移到半导体结构中的量子阱

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摘要

We investigate the energy-transfer rate from a quasi-two-dimensional (2D) quantum well with an electron-hole plasma to an empty quantum well separated by a wide barrier through dipole-dipole interaction. The rates are compared and contrasted with the 2D-2D transfer rates of classical excitons studied previously. The temperature dependence of the 2D-2D transfer rate of plasmas is strikingly different from that of excitons in general. The dependences of the rates on the carrier density, the center-to-center distance between the plasma and the quantum well, and the temperature are studied.
机译：我们研究了从具有电子空穴等离子体的准二维（2D）量子阱到通过偶极子-偶极子相互作用被宽壁垒隔开的空量子阱的能量传输速率。将该速率与先前研究的经典激子的2D-2D传输速率进行比较和对比。通常，等离子体2D-2D传输速率的温度依赖性与激子具有显着差异。研究了速率对载流子密度，等离子体与量子阱之间的中心距和温度的依赖性。

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