n-type doping via avoiding the stabilization of DX centers in InP quantum dots

著录项

• 来源
  《Physical review》 |2010年第12期|p.121307.1-121307.4|共4页
• 作者

  Lucas V. Besteiro; Luis Tortajada; Murilo L. Tiago; L. J. Gallego; James R. Chelikowsky; M. M. G. Alemany;

  展开▼
• 作者单位

  Departamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela, Spain;

  rnDepartamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela, Spain;

  Center for Computational Materials, Institute for Computational Engineering and Sciences, University of Texas, Austin, Texas 78712, USA;

  rnDepartamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela, Spain;

  Center for Computational Materials, Institute for Computational Engineering and Sciences, University of Texas, Austin, Texas 78712, USA;

  rnDepartamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela, Spain;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  theories and models of crystal defects; density functional theory, local density approximation, gradient and other corrections; electronic structure of nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals;

  机译：晶体缺陷的理论和模型;密度泛函理论;局部密度近似;梯度和其他校正;纳米级材料的电子结构：簇;纳米颗粒;纳米管和纳米晶体;