Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

U. Jahn; O. Brandt; E. Luna; X. Sun; H. Wang; D. S. Jiang; L. F. Bian; H. Yang

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Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

机译：通过在（In，Ga）N / GaN异质外延层中穿通位错捕获载流子

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Using spatially resolved cathodoluminescence spectroscopy, we investigate the spatial luminescence distribution in a fully strained (In,Ga)N layer, in particular, its correlation with the distribution of threading dislocations (TDs). Regarding the impact of TDs on the luminescence properties, we can clearly distinguish between pure edge-type TDs and TDs with screw component. At the positions of both types of TDs, we establish nonradiative recombination sinks. The radius for carrier capture is at least four times larger for TDs with screw component as for pure edge-type TDs. The large capture radius of the former is due to a spiral-like growth mode resulting in an increase in the In content in the center of the spiral domains in comparison to their periphery.

机译：使用空间分辨的阴极发光光谱，我们研究了在完全应变的（In，Ga）N层中的空间发光分布，特别是它与线程位错（TDs）分布的相关性。关于TD对发光特性的影响，我们可以清楚地区分纯边缘型TD和带螺丝组件的TD。在两种类型的运输工具的位置，我们建立非辐射重组接收器。对于带螺丝组件的TD，载流子捕获的半径至少是纯边缘型TD的四倍。前者的大捕获半径归因于螺旋状的生长模式，与螺旋状畴的外围相比，导致螺旋状畴中心的In含量增加。

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来源
《Physical review》 |2010年第12期|p.125314.1-125314.5|共5页
作者
U. Jahn; O. Brandt; E. Luna; X. Sun; H. Wang; D. S. Jiang; L. F. Bian; H. Yang;
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作者单位

Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

rnPaul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

rnPaul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

rnInstitute of Semiconductors, Chinese Academy of Sciences, Beijing, China;

rnInstitute of Semiconductors, Chinese Academy of Sciences, Beijing, China;

rnInstitute of Semiconductors, Chinese Academy of Sciences, Beijing, China;

rnSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China;

rnSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China;

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Ⅱ-Ⅵ semiconductors; optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Ⅲ-Ⅴ semiconductors; cathodoluminescence, ionoluminescence;

机译：Ⅱ-Ⅵ半导体;低维;介观和纳米级材料和结构的光学特性;Ⅲ-Ⅴ族半导体;阴极发光;电离发光;

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2. Misfit dislocation formation at heterointerfaces in (AI,ln)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates [J] . F. Wu, A. Tyagj, E. C. Young, Journal of Applied Physics . 2011,第3期

机译：在半极性自立式GaN衬底上生长的（AI，ln）GaN异质外延层中异质界面处形成失配位错
3. Reduction of threading dislocations in GaN layers using in situ deposited silicon nitride masks on AlN and GaN nucleation layers [J] . X. L. Fang, Y. Q. Wang, H. Meidia, Applied Physics Letters . 2004,第4期

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4. Effect of high Al-content AlGaN/GaN short period strained-layer superlattices on the threading dislocations in GaN films [C] . Cheng-Wei Huang, Su-Fen Tseng, Cheng-Liang Wang, . 2003

机译：高Al含量的AlGaN / GaN短时应变层超晶格对GaN薄膜中的位错的影响
5. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth [D] . Tanaka, Atsunori. 2019

机译：通过选择性地区MOCVD生长的异膜厚GaN层和垂直大功率器件
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. Response to "Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence'" Appl. Phys. Lett. 97, 166101 (2010) [O] . Aimez Vincent, Drouin Dominique 2010

机译：对“关于'通过低压阴极发光在GaN外延层中的螺纹位错附近的载流子复合'的评论”的回应Appl。物理来吧97，166101（2010）

Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

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