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首页> 外文期刊>Physical review >Point defect distribution in high-mobility conductive SrTiO_3 crystals
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Point defect distribution in high-mobility conductive SrTiO_3 crystals

机译：高迁移率导电SrTiO_3晶体中的点缺陷分布

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摘要

We have carried out positron-annihilation spectroscopy to characterize the spatial distribution and the nature of vacancy defects in insulating as-received as well as in reduced SrTiO_3 substrates exhibiting high-mobility conduction. The substrates were reduced either by ion etching the substrate surfaces or by doping with vacancies during thin-film deposition at low pressure and high temperature. We show that Ti vacancies are native defects homogeneously distributed in as-received substrates. In contrast, the dominant vacancy defects are the same both in ion etched crystals and substrates reduced during the film growth, and they consist of nonhomogeneous distributions of cation-oxygen vacancy complexes. Their spatial extension is tuned from a few microns in ion-etched samples to the whole substrate in specimens reduced during film deposition. Our results shed light on the transport mechanisms of conductive SrTiO_3 crystals and on strategies for defect-engineered oxide quantum wells, wires, and dots.
机译：我们已经进行了正电子an没光谱法，以表征空间分布和绝缘态空位缺陷的性质以及接收到的具有高迁移率导电性的还原SrTiO_3衬底中的空位缺陷的性质。通过离子蚀刻衬底表面或通过在低压和高温下的薄膜沉积过程中掺杂空位来减小衬底。我们表明钛空位是天然缺陷均匀地分布在接收基板中。相反，在离子腐蚀的晶体和在薄膜生长过程中被还原的衬底中，主要的空位缺陷都是相同的，并且它们由阳离子-氧空位络合物的不均匀分布组成。它们的空间扩展范围从离子蚀刻样品中的几微米调整到样品在膜沉积过程中减少的整个基材。我们的研究结果揭示了导电SrTiO_3晶体的传输机理以及缺陷工程化的氧化物量子阱，导线和点的策略。

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  • 来源
    《Physical review》 |2010年第14期|144109.1-144109.9|共9页
  • 作者

    A. Gentils; O. Copie; G. Herranz; F. Fortuna; M. Bibes; K. Bouzehouane; E. Jacquet; C. Carretero; M. Basletic; E. Tafra; A. Hamzic; A. Barthelemy;

  • 作者单位

    Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris-Sud II, 91405 Orsay Campus, France CEMHTI Site Cyclotron, CNRS, 3A rue de la Femllerie, 45071 Orleans Cedex 2, France;

    rnUnite Mixte de Physique CNRS/Thales associee a I'Universite Paris-Sud, Campus de Poly technique, I Avenue A. Fresnel, 91767 Palaiseau, France;

    rnUnite Mixte de Physique CNRS/Thales associee a I'Universite Paris-Sud, Campus de Poly technique, I Avenue A. Fresnel, 91767 Palaiseau, France Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, Bellaterra 08193, Catalonia, Spain;

    rnCentre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris-Sud II, 91405 Orsay Campus, France;

    rnUnite Mixte de Physique CNRS/Thales associee a I'Universite Paris-Sud, Campus de Poly technique, I Avenue A. Fresnel, 91767 Palaiseau, France;

    rnUnite Mixte de Physique CNRS/Thales associee a I'Universite Paris-Sud, Campus de Poly technique, I Avenue A. Fresnel, 91767 Palaiseau, France;

    rnUnite Mixte de Physique CNRS/Thales associee a I'Universite Paris-Sud, Campus de Poly technique, I Avenue A. Fresnel, 91767 Palaiseau, France;

    rnUnite Mixte de Physique CNRS/Thales associee a I'Universite Paris-Sud, Campus de Poly technique, I Avenue A. Fresnel, 91767 Palaiseau, France;

    rnDepartment of Physics, Faculty of Science, University of Zagreb, Bijenicka 32, P.O. Box 331, HR-10002 Zagreb, Croatia;

    rnDepartment of Physics, Faculty of Science, University of Zagreb, Bijenicka 32, P.O. Box 331, HR-10002 Zagreb, Croatia;

    rnDepartment of Physics, Faculty of Science, University of Zagreb, Bijenicka 32, P.O. Box 331, HR-10002 Zagreb, Croatia;

    rnUnite Mixte de Physique CNRS/Thales associee a I'Universite Paris-Sud, Campus de Poly technique, I Avenue A. Fresnel, 91767 Palaiseau, France;

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  • 正文语种 eng
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  • 关键词

    positron annihilation; ion radiation effects;

    机译：正电子an灭离子辐射效应;

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