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Magnetization reorientation in Ga_xMn_(1-x)As films: Planar Hall effect measurements

机译:Ga_xMn_(1-x)As薄膜中的磁化重新定向:平面霍尔效应测量

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摘要

The process of magnetization reorientation in a ferromagnetic semiconductor GaMnAs films was investigated using planar Hall effect measurements. In addition to the well-known two-step switching behavior that occurs during this process, we have observed two additional distinct features in field scan data of the planar Hall resistance (PHR). First, the region of the external field required to begin and complete the reorientation of magnetization from one easy axis to another strongly depends on the direction of the applied field. And second, the maximum amplitude of PHR is significantly reduced during magnetization reversal when the applied field is oriented near one of the easy axes of the GaMnAs film. We provide an explanation of these phenomena using the magnetic field dependence of the free-energy density and assuming the coexistence of multiple domains with three different directions of magnetization in the sample.
机译:使用平面霍尔效应测量研究了铁磁半导体GaMnAs薄膜中的磁化重定向过程。除了在此过程中发生的众所周知的两步切换行为外,我们还观察到了平面霍尔电阻(PHR)的现场扫描数据中的两个其他不同特征。首先,开始和完成磁化强度从一个易轴到另一个的重新定向所需的外部磁场区域强烈取决于所施加磁场的方向。其次,当施加的磁场定向在GaMnAs薄膜的易轴之一附近时,在磁化反转期间PHR的最大幅度会大大降低。我们使用自由能密度的磁场依赖性并假设样品中具有三个不同磁化方向的多个畴共存来提供对这些现象的解释。

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