...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals
【24h】

Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

机译：小分子有机半导体中状态的陷阱密度：单晶薄膜晶体管的定量比较

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap [trap density of states (trap DOS)] of small-molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT's), single crystal field-effect transistors (SC-FET's) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of "fast" hole traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small-molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase in the trap DOS very close (<0.15 eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase in the trap DOS. Moreover, we show that the trap DOS in TFT's with small-molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small-molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.
机译：我们表明，有可能实现有机电子学的最终目标之一：生产陷阱密度低至单晶体中低的有机场效应晶体管。我们研究了从有机场效应晶体管的电特性或空间电荷限制电流测量得出的小分子有机半导体的带隙[状态陷阱密度（陷阱陷阱）（DOS陷阱）]中的局部态的光谱密度。这是通过比较来自包括薄膜晶体管（TFT），单晶场效应晶体管（SC-FET）和体样本的大量样本的数据来完成的。所有数据的汇编强烈表明，与晶界相关的结构缺陷是由真空蒸发并五苯制备的TFT中“快速”空穴陷阱的主要原因。对于由小分子半导体（例如红荧烯）制成的高性能晶体管，必须减少由吸附在栅极电介质表面上的水引起的偶极无序。在陷阱密度非常低的样品中，有时我们会观察到陷阱DOS在非常接近（<0.15 eV）迁移率边缘的情况下陡峭增加，其特征斜率为10-20 meV。讨论了由于分子间转移积分的热波动导致的谱带展宽在何种程度上反映在阱DOS的急剧增加中。此外，我们表明，即使将一方面具有范德华型相互作用的小分子多晶膜与共价键合比较，带有小分子半导体的TFT中的陷阱DOS与氢化非晶硅中的DOS非常相似。另一方面，非晶硅。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号