Growth mechanism of the Si (110) faceted dendrite

著录项

• 来源
  《Physical review》 |2010年第22期|P.224106.1-224106.5|共5页
• 作者

  K. Fujiwara; H. Fukuda; N. Usami; K. Nakajima; S. Uda;

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• 作者单位

  Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

  rnInstitute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

  rnInstitute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

  rnInstitute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

  rnInstitute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; growth from melts; zone melting and refining;

  机译：晶体生长的理论和模型;晶体生长;晶体形态和取向的物理学;融化而成长;区域熔炼;