Electron spin resonance parameters of bulk oxygen vacancy in semiconducting tin dioxide

著录项

• 来源
  《Physical review》 |2010年第23期|P.235202.1-235202.10|共10页
• 作者

  Nergiz OEzcan; Tommi Kortelainen; Vyacheslav Golovanov; Tapio T. Rantala; Juha Vaara;

  展开▼
• 作者单位

  Laboratory of Physical Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55 (A.I. Virtasen aukio 1), FIN-00014 Helsinki, Finland;

  Department of Physics, Tampere University of Technology, P.O. Box 692, FIN-3310I Tampere, Finland;

  rnSouth- Ukrainian University, Staroportofrankovskaya Str. 26, 65008 Odessa, Ukraine;

  rnDepartment of Physics, Tampere University of Technology, P.O. Box 692, FIN-3310I Tampere, Finland;

  rnNMR Research Group, Department of Physics, University of Oulu, P.O. Box 3000, FIN-90014 Oulu, Finland Laboratory of Physical Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55 (A.I. Virtasen aukio 1), FIN-00014 Helsinki, Finland;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  color centers and other defects; semiconductor compounds; charge carriers: generation, recombination, lifetime, and trapping;

  机译：色心和其他缺陷;半导体化合物电荷载体：产生;重组;寿命和捕获;