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首页> 外文期刊>Physical review >Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping
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Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping

机译：分子掺杂对SiC上外延石墨烯的电荷中性和带隙调节

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摘要

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by noncovalently functionalizing graphene with the strong electron-acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron-dispersion spectra from angular-resolved photoemission spectroscopy. In bilayer graphene the band-gap that originates from the SiC/graphene interface dipole increases with increasing F4-TCNQ deposition and, as a consequence of the molecular doping, the Fermi level is shifted into the band-gap. The reduction in the charge-carrier density upon molecular deposition is quantified using electronic Fermi surfaces and Raman spectroscopy. The structural and electronic characteristics of the graphene/F4-TCNQ charge-transfer complex are investigated by x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The doping effect on graphene is preserved in air and is temperature resistant up to 200 ℃. Furthermore, graphene noncovalent functionalization with F4-TCNQ can be implemented not only via evaporation in ultrahigh vacuum but also by wet chemistry.
机译：SiC（0001）上的外延石墨烯遭受强烈的本征n型掺杂。我们证明了过量的负电荷可以通过非共价功能化的石墨烯与强电子受体四氟四氰基喹二甲烷（F4-TCNQ）完全补偿。如来自角分辨光发射光谱的电子分散光谱所示，可以在单层石墨烯中达到电荷中性。在双层石墨烯中，源自SiC /石墨烯界面偶极子的带隙随着F4-TCNQ沉积的增加而增加，并且由于分子掺杂，费米能级移入了带隙。使用电子费米表面和拉曼光谱法定量分析分子沉积时电荷载流子密度的降低。通过X射线光电子能谱和紫外光电子能谱研究了石墨烯/ F4-TCNQ电荷转移复合物的结构和电子特性。对石墨烯的掺杂作用保留在空气中，最高可耐200℃的温度。此外，用F4-TCNQ进行的石墨烯非共价官能化不仅可以通过超高真空蒸发来实现，还可以通过湿化学来实现。

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  • 来源
    《Physical review》 |2010年第23期|P.235401.1-235401.8|共8页
  • 作者

    C. Coletti; C. Riedl; D. S. Lee; B. Krauss; L. Patthey; K. von Klitzing; J. H. Smet; U. Starke;

  • 作者单位

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;

    rnMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;

    rnMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;

    rnMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;

    rnPaul Scherrer Institut, CH-5232 Villigen PSI, Switzerland;

    rnMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;

    rnMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;

    rnMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany;

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