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Large positive magnetoresistance of the lightly doped La_2CuO_4 Mott insulator

机译:轻掺杂La_2CuO_4 Mott绝缘子的大正磁电阻

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摘要

The in-plane and out-of-plane magnetoresistance (MR) of single crystals of La_2CuO_4, lightly doped (x=0.03) with either Sr (La_(2-x)Sr_xCuO_4) or Li (La_2Cu_(1-x)Li_xO_4), have been measured in the fields applied parallel and perpendicular to the CuO_2 planes. Both La_(1.97)Sr_(0.03)CuO_4 and La_2Cu_(0.97)Li_(0.03)O_4 exhibit the emergence of a positive MR at temperatures (T) well below the spin glass transition temperature T_(sg), where charge dynamics is also glassy. This positive MR grows as T→ 0 and shows hysteresis and memory. In this regime, the in-plane resistance R_(ab)(T,B) is described by a scaling function, suggesting that short-range Coulomb repulsion between two holes in the same disorder-localized state plays a key role at low T. The results highlight similarities between this magnetic material and a broad class of well-studied, nonmagnetic disordered insulators.
机译:La_2CuO_4单晶的Sr(La_(2-x)Sr_xCuO_4)或Li(La_2Cu_(1-x)Li_xO_4)轻掺杂(x = 0.03)的单晶的面内和面外磁阻(MR)在平行和垂直于CuO_2平面施加的场中已测量。 La_(1.97)Sr_(0.03)CuO_4和La_2Cu_(0.97)Li_(0.03)O_4都在远低于自旋玻璃化转变温度T_(sg)的温度(T)处出现正MR,在此情况下电荷动力学也呈玻璃态。该正MR随T→0的增加而增长,并显示出磁滞和记忆。在这种情况下,平面电阻R_(ab)(T,B)由比例函数描述,表明在相同的无序状态下,两个孔之间的短距离库仑排斥在低T下起关键作用。结果突显了这种磁性材料与经过广泛研究的非磁性无序绝缘子之间的相似性。

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