Theoretical intrinsic lifetime limit of shallow donor states in silicon

著录项

• 来源
  《Physical review》 |2010年第24期|P.245212.1-245212.5|共5页
• 作者

  Valeriy Tyuterev; Jelena Sjakste; Nathalie Vast;

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• 作者单位

  Ecole Poly technique, Laboratoire des Solides Irradies, CEA-DSM, CNRS, 91128 Palaiseau, France Tomsk State Pedagogical University, 634061 Kievskaya 60, Tomsk, Russia;

  rnEcole Poly technique, Laboratoire des Solides Irradies, CEA-DSM, CNRS, 91128 Palaiseau, France;

  rnEcole Poly technique, Laboratoire des Solides Irradies, CEA-DSM, CNRS, 91128 Palaiseau, France;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  theory, models, and numerical simulation; density functional theory, local density approximation, gradient and other corrections; polarons and electron-phonon interactions; impurity and defect levels;

  机译：理论;模型和数值模拟;密度泛函理论;局部密度近似;梯度和其他校正;极化子和电子-声子相互作用;杂质和缺陷水平;