Edge structure of epitaxial graphene islands

著录项

• 来源
  《Physical review》 |2010年第24期|P.245408.1-245408.4|共4页
• 作者

  Gregory M. Rutter; Nathan P. Guisinger; Jason N. Crain; Phillip N. First; Joseph A. Stroscio;

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• 作者单位

  School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA Center for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA;

  rnCenter for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA Argonne National Laboratory, Argonne, IL 60439-4806;

  rnCenter for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA;

  rnSchool of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA;

  rnCenter for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  scanning tunneling microscopy (including chemistry induced with STM);

  机译：扫描隧道显微镜（包括用STM诱导的化学反应）;