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Interference between bulk and boundary scattering in high quality films

机译：高质量薄膜中体积和边界散射之间的干扰

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摘要

Quasiclassical interference between bulk and boundary scattering channels in thin metal films with rough surfaces is discussed. The effective transport time, which is calculated beyond Mathiessen's approximation, exhibits a nonanalytical dependence on the bulk relaxation time. Interference effects strongly affect the temperature (phonon scattering in the bulk) or concentration (impurity-scattering) dependencies of the conductivity. The results for large bulk free paths L_b and large correlation radii (lateral sizes) R of surface inhomoge-neities are described by simple analytical equations. At R~2～aL_b we predict a crossover between two asymptotic regimes for interference contributions that are characterized by distinct temperature/concentration dependencies. Experimental implications of our results are discussed.
机译：讨论了具有粗糙表面的金属薄膜中本体和边界散射通道之间的准经典干涉。计算出超出Mathiessen近似值的有效运输时间，显示出对体积弛豫时间的非分析依赖性。干扰效应会强烈影响温度（整体中的声子散射）或电导率的浓度（杂质散射）依赖性。用简单的解析方程描述了较大的自由空间路径L_b和较大的表面不均匀度的相关半径（横向尺寸）R的结果。在R〜2〜aL_b处，我们预测了两种渐近状态之间的交叉，其干扰贡献具有明显的温度/浓度依赖性。我们的结果的实验​​意义进行了讨论。

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