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首页> 外文期刊>Physical review >Phase transformation in Si from semiconducting diamond to metallic β-Sn phase in QMC and DFT under hydrostatic and anisotropic stress
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Phase transformation in Si from semiconducting diamond to metallic β-Sn phase in QMC and DFT under hydrostatic and anisotropic stress

机译:静水压和各向异性应力下QMC和DFT中Si从半导体金刚石到金属β-Sn相的相变

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摘要

Silicon undergoes a phase transition from the semiconducting diamond phase to the metallic β-Sn phase under pressure. We use quantum Monte Carlo calculations to predict the transformation pressure and compare the results to density-functional calculations employing the local-density approximation, the generalized-gradient approximations PBE, PW91, WC, AM05, PBEsol, and the hybrid functional HSE06 for the exchange-correlation functional. Diffusion Monte Carlo predicts a transition pressure of 14.0 ± 1.0 Gpa slightly above the experimentally observed transition pressure range of 11.3-12.6 Gpa. The HSE06 hybrid functional predicts a transition pressure of 12.4 Gpa in excellent agreement with experiments. Exchange-correlation functionals using the local-density approximation and generalized-gradient approximations result in transition pressures ranging from 3.5 to 10.0 Gpa, well below the experimental values. The transition pressure is sensitive to stress anisotropy. Anisotropy in the stress along any of the cubic axes of the diamond phase of silicon lowers the equilibrium transition pressure and may explain the discrepancy between the various experimental values as well as the small overestimate of the quantum Monte Carlo transition pressure.
机译:硅在压力下经历了从半导体金刚石相到金属β-Sn相的相变。我们使用量子蒙特卡洛计算来预测相变压力,并将结果与​​使用局部密度近似,广义梯度近似PBE,PW91,WC,AM05,PBEsol和混合功能HSE06进行交换的密度泛函计算进行比较-相关功能。扩散Monte Carlo预测的过渡压力为14.0±1.0 Gpa,略高于实验观察到的11.3-12.6 Gpa的过渡压力范围。 HSE06混合功能模块预测的过渡压力为12.4 Gpa,与实验非常吻合。使用局部密度近似和广义梯度近似的交换相关函数导致过渡压力范围为3.5至10.0 Gpa,远低于实验值。过渡压力对应力各向异性敏感。硅金刚石相的任何立方轴上的应力各向异性都降低了平衡转变压力,并且可以解释各种实验值之间的差异以及量子蒙特卡洛转变压力的小幅高估。

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