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Correlated polarization switching in the proximity of a 180° domain wall

机译:180°畴壁附近的相关偏振切换

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摘要

Domain-wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180° ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a two-dimensional (2D) nucleus at the wall to three-dimensional nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales on the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip with bias that is well below the bulk nucleation level at large distances from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls in ferroelectrics and atomistic models of 2D nucleation.
机译:铁磁性材料中的畴壁动力学增强了数据存储和信息技术设备的功能。使用扫描探针显微镜尖端的局部电场,我们实验证明了在最初平坦的180°铁电畴壁附近,极化反转行为的范围非常丰富。发现成核偏差从壁上的二维(2D)原子核到本体中的三维核增加了一个数量级。因此,该壁的铁电性明显比块体软。壁深深地影响着微米级长度标尺的切换。使用解析理论和相场建模分析了相关开关的机制。远距离影响归因于在有偏斜的尖端的影响下壁弯曲,该尖端在距壁很远的位置处远低于本体成核水平。这些研究为铁电畴壁的宏观和介观物理学与2D成核的原子模型之间提供了实验联系。

著录项

  • 来源
    《Physical review》 |2010年第2期|P.024111.1-024111.11|共11页
  • 作者单位

    Materials Research Institute and Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA Physics Department, Clarion University of Pennsylvania, Clarion, Pennsylvania 16214, USA;

    V. Lashkarev Institute of Semiconductor Physics, National Academy of Science of Ukraine, 41, pr. Nauki, 03028 Kiev, Ukraine;

    Materials Research Institute and Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

    Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania, 19104 USA;

    Pacific Northwest National Laboratory, Richland, Washington 99352, USA;

    Materials Research Institute and Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Materials Research Institute and Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania, 19104 USA;

    V. Lashkarev Institute of Semiconductor Physics, National Academy of Science of Ukraine, 41, pr. Nauki, 03028 Kiev, Ukraine;

    Institute for Problems of Materials Science, National Academy of Science of Ukraine, 3, Krjijanovskogo, 03142 Kiev, Ukraine;

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

    Materials Research Institute and Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Materials Research Institute and Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    domain structure; hysteresis; microscopy of surfaces, interfaces, and thin films; switching phenomena;

    机译:域结构;磁滞;表面;界面和薄膜的显微镜检查;开关现象;

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