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首页> 外文期刊>Physical review >Vacancy defects in PbTiO_3 and lanthanide-ion-doped PbTiO_3: A study of positron lifetimes
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Vacancy defects in PbTiO_3 and lanthanide-ion-doped PbTiO_3: A study of positron lifetimes

机译：PbTiO_3和镧系元素掺杂的PbTiO_3中的空位缺陷：正电子寿命的研究

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摘要

Positron lifetime measurements were performed on lanthanide- (Ln) ion-doped PbTiO_3 and identified the presence of both Pb vacancy, V_(Pb), and Ti vacancy, V_(Ti), related point defects. Increasing the concentration of Ln ions La to Eu resulted in an increase in the dominant contribution to the positron lifetime spectrum from V_(Pb)-related defects, consistent with donor ion substitution at the Pb site. By contrast, increasing the concentration of Dy ions decreased the ratio of V_(Pb)- to V_(Ti)-related defects. The behavior is attributed to the incorporation of Dy~(3+) ions as acceptors at Ti sites. Density-functional theory calculations of positron lifetimes for vacancy complexes, and relaxed structure monovacancy defects, in PbTiO_3 are reported and support the vacancy-defect assignments.
机译：在掺杂镧系元素（Ln）的PbTiO_3上进行正电子寿命测量，并确定存在Pb空位V_（Pb）和Ti空位V_（Ti）相关点缺陷。 Ln离子La到Eu的浓度增加，导致V_（Pb）相关缺陷对正电子寿命谱的主要贡献增加，这与Pb位置的供体离子取代相一致。相反，增加Dy离子的浓度会降低V_（Pb）-与V_（Ti）相关缺陷的比率。该行为归因于在Ti位点掺入Dy〜（3+）离子作为受体。报道了PbTiO_3中空位络合物和松弛结构的单空位缺陷的正电子寿命的密度泛函理论计算，并支持空位-缺陷分配。

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  • 来源
    《Physical review》 |2010年第2期|P.024113.1-024113.7|共7页
  • 作者

    R. A. Mackie; A. Pelaiz-Barranco; D. J. Keeble;

  • 作者单位

    Carnegie Laboratory of Physics, School of Engineering, Physics, and Mathematics, University of Dundee,Dundee DD1 4HN, United Kingdom;

    Facultad de Fisica-Institute de Ciencia y Tecnologia de Materiales, Universidad de La Habana,San Ldzaro y L, Vedado, La Habana 10400, Cuba;

    Carnegie Laboratory of Physics, School of Engineering, Physics, and Mathematics, University of Dundee,Dundee DD1 4HN, United Kingdom;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    positron annihilation; positron states;

    机译：正电子an灭;正电子态;

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