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Influence of Dresselhaus spin-orbit interaction on the domain wall magnetoresistance of diluted magnetic semiconductor thin films

机译:Dresselhaus自旋轨道相互作用对稀磁半导体薄膜畴壁磁阻的影响

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摘要

Domain wall magnetoresistance (MR) of an impure magnetic semiconductor layer is studied theoretically within the semiclassical approach. The effect of the Dresselhaus spin-orbit interaction is taken into account and it is shown that this interaction can enhance the domain wall MR. In the absence of Dresselhaus interaction, the domain wall MR decreases monotonously with the domain wall width but presence of the Dresselhaus coupling prevents this reduction for a range of the domain wall thicknesses. It is also revealed that the Dresselhaus spin-orbit interaction is more effective than the Rashba term in producing domain wall resistance in a typical magnetic semiconductor.
机译:在半经典方法中,理论上研究了不纯磁性半导体层的畴壁磁阻(MR)。考虑了Dresselhaus自旋轨道相互作用的影响,并且表明这种相互作用可以增强畴壁MR。在没有Dresselhaus相互作用的情况下,畴壁MR随着畴壁宽度单调减小,但是Dresselhaus联轴器的存在阻止了在一定范围的畴壁厚度下的这种减小。还揭示出,在典型的磁半导体中,Dresselhaus自旋轨道相互作用比Rashba术语更有效地产生畴壁电阻。

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