Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

著录项

• 来源
  《Physical review》 |2010年第3期|P.035303.1-035303.6|共6页
• 作者

  J. K. Garleff; rnA. P. Wijnheijmer; rnA. Yu. Silov; rnJ. van Bree; rnW. Van Roy; rnJ.-M. Tang; rnM. E. Flatte; rnP. M. Koenraad;

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• 作者单位

  COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands;

  rnCOBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands;

  rnCOBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands;

  rnCOBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands;

  rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

  rnDepartment of Physics, University of New Hampshire, Durham, New Hampshire 03824, USA;

  rnOptical Science and technology Center and Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA;

  rnCOBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  scanning tunneling microscopy (including chemistry induced with STM); semiconductor surfaces; impurity and defect levels; energy states of adsorbed species; impurity and defect levels;

  机译：扫描隧道显微镜（包括用STM诱导的化学反应）;半导体表面;杂质和缺陷水平;吸附物质的能量状态;杂质和缺陷水平;