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首页> 外文期刊>Physical review >Two miniband model for self-sustained oscillations of the current through resonant-tunneling semiconductor superlattices
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Two miniband model for self-sustained oscillations of the current through resonant-tunneling semiconductor superlattices

机译：通过谐振隧道半导体超晶格的电流自持振荡的两个微带模型

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摘要

A two miniband model for electron transport in semiconductor superlattices that includes scattering and interminiband tunnelling is proposed. The model equations for Wigner functions in a basis spanned by Pauli matrices include electron-electron scattering in the Hartree approximation and modified Bhatnagar-Gross-Krook collision terms. For strong applied fields, balance equations for the electric field and the miniband populations are derived using a Chapman-Enskog perturbation technique. These equations are then solved numerically for a dc voltage biased superlattice. Results include self-sustained current oscillations due to repeated nucleation of electric field pulses at the injecting contact region and their motion toward the collector. Numerical reconstruction of the Wigner functions shows that the miniband with higher energy is empty during most of the oscillation period: it becomes populated only when the local electric field (corresponding to the passing pulse) is sufficiently large to trigger resonant tunneling.
机译：提出了两个微带模型用于电子在半导体超晶格中的传输，包括散射和微带间隧穿。在Pauli矩阵跨越的基础上，用于Wigner函数的模型方程包括Hartree近似中的电子-电子散射和改进的Bhatnagar-Gross-Krook碰撞项。对于强应用场，使用Chapman-Enskog摄动技术推导出电场和微带总体的平衡方程。然后针对直流偏置的超晶格对这些方程进行数值求解。结果包括由于电场脉冲在注入接触区域的反复成核以及它们向集电极的运动而导致的自持电流振荡。维格纳函数的数值重建表明，具有较高能量的微带在整个振荡周期中都是空的：只有当局部电场（对应于通过的脉冲）足够大以触发共振隧穿时，该微带才会被填充。

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