Positrons as interface-sensitive probes of polar semiconductor heterostructures

著录项

• 来源
  《Physical review》 |2010年第4期|P.041307.1-041307.4|共4页
• 作者

  I. Makkonen; A. Snicker; M. J. Puska; J.-M. Maeki; F. Tuomisto;

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• 作者单位

  Helsinki Institute of Physics and Department of Applied Physics, Aalto University, P.O. Box 14100, FI-00076 AALTO, Espoo, Finland;

  Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 AALTO, Espoo, Finland;

  Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 AALTO, Espoo, Finland;

  Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 AALTO, Espoo, Finland;

  Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 AALTO, Espoo, Finland;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  positron annihilation; Ⅲ-Ⅴ semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; elements, oxides, nitrides, borides, carbides, chalcogenides, etc.;

  机译：正电子an灭;Ⅲ-Ⅴ族半导体间接触;p-n结和异质结;元素;氧化物;氮化物;硼化物;碳化物;硫族化物等。;