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Adsorption and desorption kinetics of Ga on GaN(OOOl): Application of Wolkenstein theory

机译：Ga在GaN（OOOl）上的吸附和解吸动力学：Wolkenstein理论的应用

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摘要

The kinetics of Ga adsorption/desorption on GaN(0001) surfaces is investigated over the temperature range of 680-750℃ using real-time spectroscopic ellipsometry. The adsorption and desorption kinetics are described in the framework of the Wolkenstein theory, which considers not only the equilibrium between Ga adsorbed on the surface and Ga in the gas phase but also the electronic equilibrium at the surface. It is shown that, because of the fixed polarization charge existing at the GaN(0001) surface, Ga adsorption and desorption processes involve neutral and charged Ga states. By considering the GaN surface charge involved in the surface processes, we demonstrate that a second-order kinetics more accurately describes Ga desorption, in comparison with conventional models, and yields an apparent activation energy of 2.85 ±0.02 eV for Ga desorption consistent with experiments.
机译：利用实时椭圆光谱法研究了在680-750℃温度范围内Ga在GaN（0001）表面的吸附/解吸动力学。吸附和解吸动力学是在Wolkenstein理论的框架内描述的，该理论不仅考虑了表面吸附的Ga和气相中Ga的平衡，还考虑了表面的电子平衡。结果表明，由于存在于GaN（0001）表面的固定极化电荷，Ga的吸附和解吸过程涉及中性和带电的Ga态。通过考虑表面过程中涉及的GaN表面电荷，我们证明了与常规模型相比，二次动力学更准确地描述了Ga解吸，并且产生了与实验一致的2.85±0.02 eV的表观活化能。

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  • 来源
    《Physical review》 |2010年第7期|p.075326.1-075326.7|共7页
  • 作者

    Giovanni Bruno; Maria Losurdo; Tong-Ho Kim; April Brown;

  • 作者单位

    Institute of Inorganic Methodologies and of Plasmas (IMIP)-CNR, via Orabona, 4-70126 Bari, Italy;

    rnInstitute of Inorganic Methodologies and of Plasmas (IMIP)-CNR, via Orabona, 4-70126 Bari, Italy;

    rnDepartment of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, USA;

    rnDepartment of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, USA;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    adsorption/desorption kinetics; semiconductor surfaces;

    机译：吸附/解吸动力学半导体表面;

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