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首页> 外文期刊>Physical review >Beating in electronic transport through quantum dot based devices
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Beating in electronic transport through quantum dot based devices

机译：通过基于量子点的设备击败电子运输业

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摘要

Electronic transport through a two-level system driven by external electric field and coupled to (magnetic or nonmagnetic) electron reservoirs is considered theoretically. The basic transport characteristics such as charge and spin current and tunnel magnetoresistance (TMR) are calculated in the weak-coupling approximation by the use of rate equation connected with Green's function formalism and slave-boson approach. The time-dependent phenomenon is considered in the gradient expansion approximation. The results show that coherent beating pattern can be observed both in current and TMR. The proposed system consisting of two quantum dots attached to external leads, in which the dots' levels can be tuned independently, can be realized experimentally to test this well-known physical phenomenon. Finally, we also indicate possible practical applications of such device.
机译：从理论上考虑了通过由外部电场驱动并耦合到（磁性或非磁性）电子容器的两级系统进行电子传输。通过使用格林方程泛函形式和奴隶玻色方法相结合的速率方程，在弱耦合近似中计算出电荷，自旋电流和隧道磁阻（TMR）等基本传输特性。在梯度展开近似中考虑了与时间有关的现象。结果表明，在电流和TMR中都可以观察到连贯的跳动模式。所提出的系统由两个连接到外部引线的量子点组成，其中的点的电平可以独立调整，可以通过实验实现，以测试这种众所周知的物理现象。最后，我们还指出了这种设备的可能的实际应用。

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