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首页> 外文期刊>Physical review >Influence of n-type doping on electron spin dephasing in CdTe
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Influence of n-type doping on electron spin dephasing in CdTe

机译：n型掺杂对CdTe中电子自旋相移的影响

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摘要

We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase in the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17 times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs. Our data can help in cross checking the predictions of various theoretical models that were suggested in literature as an explanation of the observed nonmonotonous doping dependence of the electron spin coherence time in GaAs.
机译：我们使用时间分辨的Kerr旋转技术研究了由n型掺杂提供的具有各种电子浓度的一整套CdTe体样品的电子自旋相干性。在电子浓度低的p型CdTe和n型CdTe中，在7 K的温度下观察到40 ps的电子自旋相干时间。电子浓度的增加导致自旋相干时间大大延长，在最佳掺杂的样品中，其在7 K时可长达2.5 ns，并改变了电子的g因子。电子浓度的影响在低温下最为明显，但在室温下也具有相当大的作用。实现最长自旋相干时间的最佳电子浓度在CdTe中比在GaAs中高17倍，在CdTe中自旋相干时间的最大低温值比在GaAs中的相应值短70倍。我们的数据可以帮助交叉检查文献中提出的各种理论模型的预测，以解释在GaAs中观察到的电子自旋相干时间的非单调掺杂依赖性。

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  • 来源
    《Physical review》 |2010年第15期|p.153201.1-153201.4|共4页
  • 作者

    D. Sprinzl; P. Horodyska; N. Tesarova; E. Rozkotova; E. Belas; R. Grill; P. Maly; P. Nemec;

  • 作者单位

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

    Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic;

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  • 正文语种 eng
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  • 关键词

    spin polarized transport in semiconductors;

    机译：半导体中的自旋极化传输;

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