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Direct measurement and analysis of the conduction band density of states in diluted GaAs_1-xN_x alloys

机译：稀释的GaAs_1-xN_x合金中态的导带密度的直接测量和分析

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摘要

We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAS_(1-x)N-x with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.
机译：我们使用扫描隧穿光谱法直接表明具有低氮（N）含量x的GaAS_（1-x）Nx的态导带密度（DOS）在能带边缘上方提高了约0.5 eV，然后在更高的态下降低了能源。测得的DOS的结构与考虑到不同N环境的基于格林函数形式主义的计算非常吻合。该分析突出显示了N-N对的包含以及格林函数方法用于描述稀氮化物和相关极端半导体合金的能带结构的有效性。

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  • 来源
    《Physical review》 |2010年第16期|p.161201.1-161201.4|共4页
  • 作者

    L. Ivanova; H. Eisele; M. P. Vaughan; Ph. Ebert; A. Lenz; R. Timm; O. Schumann; L. Geelhaar; M. Dahne; S. Fahy; H. Riechert; E. P. OReilly;

  • 作者单位

    Institutfiir Festkorperphysik, Technische Universitat Berlin, Hardenbergstrafie 36, 10623 Berlin, Germany;

    Institutfiir Festkorperphysik, Technische Universitat Berlin, Hardenbergstrafie 36, 10623 Berlin, Germany;

    Tyndall National Institute, Lee Makings, Cork, Ireland;

    Institut fur Festkbrperforschung, Forschungszentrum Jiilich GmbH, 52425 Jtilich, Germany;

    Institutfiir Festkorperphysik, Technische Universitat Berlin, Hardenbergstrafie 36, 10623 Berlin, Germany;

    Institutfiir Festkorperphysik, Technische Universitat Berlin, Hardenbergstrafie 36, 10623 Berlin, Germany;

    Infineon Technologies AG, 81730 Mtinchen, Germany,Carl Zeiss SMT AG, 73447 Oberkochen, Germany;

    Infineon Technologies AG, 81730 Mtinchen, Germany,Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

    Institutfiir Festkorperphysik, Technische Universitat Berlin, Hardenbergstrafie 36, 10623 Berlin, Germany;

    Tyndall National Institute, Lee Makings, Cork, Ireland,Department of Physics, University College Cork, Cork, Ireland;

    Infineon Technologies AG, 81730 Mtinchen, Germany,Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

    Tyndall National Institute, Lee Makings, Cork, Ireland;

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  • 正文语种 eng
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  • 关键词

    semiconductor compounds; theories and models; localized states; scanning tunneling microscopy (including chemistry induced with stm); Ⅲ-Ⅴ semiconductors;

    机译：半导体化合物理论和模型;局部状态;扫描隧道显微镜（包括stm诱导的化学反应）;Ⅲ-Ⅴ族半导体;

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