Anisotropic charge transport in nonpolar GaN quantum wells: Polarization induced line charge and interface roughness scattering

著录项

• 来源
  《Physical review》 |2010年第19期|p.193301.1-193301.4|共4页
• 作者

  Aniruddha Konar; Tian Fang; Nan Sun; Debdeep Jena;

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• 作者单位

  Department of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;

  rnDepartment of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;

  rnDepartment of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;

  rnDepartment of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Ⅲ-Ⅴ semiconductors; quantum wells; scattering by point defects, dislocations, surfaces, and other imperfections (including kondo effect);

  机译：Ⅲ-Ⅴ族半导体;量子阱由点缺陷;位错;表面和其他缺陷（包括近藤效应）造成的散射;