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首页> 外文期刊>Physical review >Hard energy gap in the insulating regime of nominally granular films near the superconductor-insulator transition
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Hard energy gap in the insulating regime of nominally granular films near the superconductor-insulator transition

机译：在超导体-绝缘体过渡附近的名义颗粒薄膜的绝缘状态下的硬能隙

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A hard gap has been found on the insulating side of the thickness-tuned superconductor-insulator (SI) transition of sequences of nominally granular quench-deposited films of several different metals. This gap increases with decreasing conductivity and increasing disorder. The behavior of the activation energy with high-temperature conductance is surprisingly consistent with a theory of the SI transition in three dimensions that analyzes the competition between Anderson localization and superconductivity and takes into account the fractal nature of the localized single-particle excitations near the mobility edge. This hard gap is similar to the parity gap of a system of small grains but with the localization length replacing the grain size. Similar behavior is not found in the insulating regime close to critical resistance of the SI transition of nominally homogeneous quench-condensed films. This may result from the larger localization length in the latter, resulting in closer and unobservable spacings of the energy levels of the localized quasiparticles.
机译：在几种不同金属的名义上颗粒淬火沉积的薄膜序列的厚度调谐超导体-绝缘体（SI）过渡的绝缘侧发现了一个硬间隙。该间隙随着电导率的降低和无序性的增加而增加。具有高温电导的活化能的行为出乎意料地与三个维度上的SI跃迁理论相一致，该理论分析了安德森局部化和超导电性之间的竞争，并考虑了靠近迁移率的局部单粒子激发的分形性质。边缘。该硬间隙类似于小晶粒系统的奇偶间隙，但是用定位长度代替了晶粒尺寸。在接近名义上均质的淬火冷凝膜的SI跃迁的临界电阻的绝缘状态下，未发现类似的行为。这可能是因为后者的定位长度较大，导致定位的准粒子的能级之间的距离更近且无法观察到。

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