Photoluminescence dynamics and reduced Auger recombination in Si_(1-x)Ge_x/Si superlattices under high-density photoexcitation

Takeshi Tayagaki; Susumu Fukatsu; Yoshihiko Kanemitsu

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Photoluminescence dynamics and reduced Auger recombination in Si_(1-x)Ge_x/Si superlattices under high-density photoexcitation

机译：高密度光激发下Si_（1-x）Ge_x / Si超晶格的光致发光动力学和减少的俄歇复合

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Optical gain and stimulated emission processes in Si nanostructures are controlled by the dynamics of high-density carriers. Here, we report photoluminescence (PL) dynamics and multiexciton recombination in Si_(1-x)Ge_x/Si superlattices (SLs) under high-density excitation. Saturation of the PL intensity and rapid PL decay are observed as the excitation laser intensity is increased. These phenomena occur due to nonradiative Auger recombination of the electron-hole pairs. We find that the Auger process in Si_(1-x)Ge_x/Si SLs is less pronounced than that in the Si_(1-x)Ge_x/Si single quantum wells. Our results show that coupled nanostructures have an advantage in efficient light emission and the control of many-body carrier dynamics.

机译：Si纳米结构中的光学增益和受激发射过程由高密度载流子的动力学控制。在这里，我们报告在高密度激发下Si_（1-x）Ge_x / Si超晶格（SLs）中的光致发光（PL）动力学和多激子复合。随着激发激光强度的增加，可以观察到PL强度的饱和和PL的快速衰减。这些现象是由于电子-空穴对的非辐射俄歇复合而发生的。我们发现，Si_（1-x）Ge_x / Si SLs中的俄歇过程不如Si_（1-x）Ge_x / Si单量子阱中的俄歇过程明显。我们的结果表明，耦合的纳米结构在高效发光和控制多体载流子动力学方面具有优势。

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来源
《Physical review》 |2009年第4期|9-12|共4页
作者
Takeshi Tayagaki; Susumu Fukatsu; Yoshihiko Kanemitsu;
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作者单位

Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan;

Graduate School of Arts and Sciences, The University of Tokyo, Tokyo 153-8902, Japan;

Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8510, Japan;

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正文语种 eng
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optical properties of low-dimensional; mesoscopic; and nanoscale materials and structures;

机译：低维光学特性介观的和纳米级的材料和结构;

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专利

1. Control of auger recombination rate in Si_(1-x)Ge_x/Si heterostructures [J] . Tayagaki T., Fukatsu S., Kanemitsu Y. Journal of the Physical Society of Japan . 2010,第1期

机译：Si_（1-x）Ge_x / Si异质结构中的俄格复合率控制
2. Breakdown of the k-conservation rule in quantized Auger recombination in Si_(1-x)Ge_x nanocrystals [J] . Kei Ueda, Takeshi Tayagaki, Masatoshi Fukuda, Physical review . 2012,第15期

机译：Si_（1-x）Ge_x纳米晶体中量化俄歇复合的k守恒规律的分解
3. An artificial nonradiative recombination center model created by use of a Si_(1-x)Ge_x/Si quantum-well-inserted pseudomorphic superlattice [J] . Yosuke Terada, Yuhsuke Yasutake, Susumu Fukatsu Thin Solid Films . 2012,第8期

机译：通过使用Si_（1-x）Ge_x / Si量子阱插入的拟晶超晶格创建的人工非辐射复合中心模型
4. MOLECULAR DYNAMICS PREDICTION OF THE THERMAL CONDUCTIVITY OF SI/SI_(1-x)GE_x SUPERLATTICES [C] . E. S. Landry, A. J. H. McGaughey, M. I. Hussein International Mechanical Engineering Congress and Exposition 2007 . 2008

机译：SI / SI_（1-x）GE_x超晶格热导率的分子动力学预测
5. Photoluminescence study of silicon(1-x) germanium(x)/silicon and silicon/germanium strained layer superlattices. [D] . Steiner, Todd David. 1992

机译：硅（1-x）锗（x）/硅和硅/锗应变层超晶格的光致发光研究。
6. Interplay of bimolecular and Auger recombination in photoexcited carrier dynamics in silicon nanocrystal/silicon dioxide superlattices [O] . T. Chlouba, F. Trojánek, J. Laube, -1

机译：双分子和俄歇复合作用在硅纳米晶/二氧化硅超晶格的光激发载流子动力学中的相互作用
7. Photoluminescence dynamics and reduced Auger recombination in Si1-xGex/Si superlattices under high-density photoexcitation [O] . Tayagaki Takeshi, Fukatsu Susumu, Kanemitsu Yoshihiko 2009

机译：高密度光激发下Si1-xGex / Si超晶格的光致发光动力学和降低的俄歇重组
8. Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector [R] . Lin, T., Park, J. S., Gunapala, S. D., 1993

机译：si_（1-x）Ge_x / si异质结内部光电发射红外探测器的光响应模型

Photoluminescence dynamics and reduced Auger recombination in Si_(1-x)Ge_x/Si superlattices under high-density photoexcitation

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