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Recovery of local density of states using scanning tunneling spectroscopy

机译：使用扫描隧道光谱法恢复局部态密度

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摘要

Scanning tunneling spectroscopy (STS) provides a unique method for the investigation of the local surface-projected electron density of states (DOS), mostly for its capability of reaching atomic resolution. Such information is contained in a nonobvious way in STS data, and a proper understanding of the overall features of the system (sample + tip) is mandatory in order to obtain quantitative information. Several approaches have been proposed in the literature to tackle this problem. A common feature of these methods is that they are mostly based on a one-dimensional (ID) WKB description of the tunneling current. We present a critical analysis and an extension of the methods so far proposed, with the main goal of applying the results to STS experimental data. This study has been conducted by modeling the tip-sample system within the frame of 1D-WKB theory, investigating key open issues, such as the estimation of required but usually experimentally unknown parameters such as the tip-sample distance and the role played by the presence of a nonconstant tip local DOS on STS data. This investigation allows us to ascertain strengths and weaknesses of the existing methods and leads to an optimized and improved strategy which we propose for the analysis of STS data. We tested our conclusions on STS measurements of the Si(111)-7×7 and Au( 111) surfaces, acquired with W and Cr tips.
机译：扫描隧道光谱法（STS）提供了一种独特的方法来研究局部表面投射的电子态密度（DOS），主要是因为其达到原子分辨率的能力。此类信息以非显而易见的方式包含在STS数据中，并且必须对系统的总体特征（样品+吸头）有适当的了解，以便获得定量信息。在文献中已经提出了几种方法来解决这个问题。这些方法的共同特征是它们主要基于对隧道电流的一维（ID）WKB描述。我们提出了一种关键的分析方法，并扩展了迄今为止提出的方法，其主要目的是将结果应用于STS实验数据。这项研究是通过在1D-WKB理论框架内对尖端采样系统进行建模，调查关键的开放性问题（例如估算所需的但通常是实验未知的参数，例如尖端采样距离和传感器所起的作用）而进行的。在STS数据上存在非恒定提示本地DOS。这项调查使我们能够确定现有方法的优缺点，并提出了针对STS数据分析提出的优化和改进策略。我们测试了关于用W和Cr尖端获得的Si（111）-7×7和Au（111）表面的STS测量的结论。

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  • 来源
    《Physical review》 |2009年第4期|682-692|共11页
  • 作者

    M. Passoni; F. Donati; A. Li Bassi; C. S. Casari; C. E. Bottani;

  • 作者单位

    Dipartimento di Chimica, Materiali e Ingegneria Chimica 'G. Natta', Center for NanoEngineered Materials and Surfaces (NEMAS) and CNISM-Politecnico di Milano, Via Ponzio 34/3, 1-20133 Milan, Italy;

    Dipartimento di Chimica, Materiali e Ingegneria Chimica 'G. Natta', Center for NanoEngineered Materials and Surfaces (NEMAS) and CNISM-Politecnico di Milano, Via Ponzio 34/3, 1-20133 Milan, Italy;

    Dipartimento di Chimica, Materiali e Ingegneria Chimica 'G. Natta', Center for NanoEngineered Materials and Surfaces (NEMAS) and CNISM-Politecnico di Milano, Via Ponzio 34/3, 1-20133 Milan, Italy;

    Dipartimento di Chimica, Materiali e Ingegneria Chimica 'G. Natta', Center for NanoEngineered Materials and Surfaces (NEMAS) and CNISM-Politecnico di Milano, Via Ponzio 34/3, 1-20133 Milan, Italy;

    Dipartimento di Chimica, Materiali e Ingegneria Chimica 'G. Natta', Center for NanoEngineered Materials and Surfaces (NEMAS) and CNISM-Politecnico di Milano, Via Ponzio 34/3, 1-20133 Milan, Italy;

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  • 正文语种 eng
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  • 关键词

    surface states, band structure, electron density of states; tunneling; scanning tunneling microscopy (including chemistry induced with STM);

    机译：表面态;能带结构;态电子密度;隧道扫描隧道显微镜（包括用STM诱导的化学反应）;

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