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Reversible strain effect on the magnetization of LaCoO_3 films

机译：可逆应变对LaCoO_3薄膜磁化的影响

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摘要

The magnetization (M) of a LaCoO_3 film grown epitaxially on a piezoelectric substrate has been investigated in dependence on the biaxial in-plane strain. M decreases with the reversible release of tensile strain, with a maximum change of at least 6% per 0.1% of biaxial strain near the Curie temperature (T_C). The biaxial strain response of T_C is estimated to be below 5 K/% in the tensile strain state. This is in agreement with results from statically strained films on various substrates. As possible origins of the strain-induced magnetization are considered (ⅰ) the strain-dependent Curie temperature, (ⅱ) a strain-dependent magnetically inhomogeneous (phase-separated) state, and (ⅲ) a strain-dependent magnetic moment (spin state) of Co ions. The T_C shift is found insufficient to explain the measured strain-induced magnetization change but contributions from mechanism (ⅱ) or (ⅲ) must be involved.
机译：已经根据双轴面内应变研究了在压电基板上外延生长的LaCoO_3膜的磁化强度（M）。 M随着拉伸应变的可逆释放而减小，在居里温度（T_C）附近，每0.1％的双轴应变的最大变化至少为6％。在拉伸应变状态下，T_C的双轴应变响应估计低于5 K /％。这与各种基材上的静态应变薄膜的结果一致。可能将应变感应磁化的起源考虑为（ⅰ）应变相关的居里温度，（ⅱ）应变相关的磁不均匀（相分离）状态和（ⅲ）应变相关的磁矩（自旋状态） ）的钴离子。发现T_C位移不足以解释测得的应变引起的磁化强度变化，但必须涉及到机理（ⅱ）或（ⅲ）。

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