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Structure and electronic properties of epitaxial fluorite-type IrSi_2 on Si(001)

机译:Si(001)上外延萤石型IrSi_2的结构和电子性能

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摘要

An epitaxially stabilized Ir-silicide phase was grown in ultrathin two-phase films on Si(001). Using transmission electron microscopy it was found to have the fluorite structure. Due to the misfit between this epitaxially stabilized phase and the silicon substrate, elastic and plastic strain relaxation can be observed. Optoelectronic measurements of transmission, resistivity, and Schottky barrier height show a transition from infrared absorbing to infrared transparent films depending on thickness and reaction temperature. First-principles calculations confirm the experimental data on the structure and electronic properties of fluorite-type Ir disilicide.
机译:在Si(001)上的超薄两相膜中生长了外延稳定的Ir硅化物相。使用透射电子显微镜,发现具有萤石结构。由于该外延稳定相与硅衬底之间的不匹配,可以观察到弹性和塑性应变松弛。透射率,电阻率和肖特基势垒高度的光电测量结果显示,取决于厚度和反应温度,红外吸收膜会转变为红外透明膜。第一性原理计算证实了萤石型铱二硅化物的结构和电子性能的实验数据。

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