Infrared spectroscopy of electronic bands in bilayer graphene

A. B. Kuzmenko; E. van Heumen; D. van der Marel; P. Lerch; P. Blake; K. S. Novoselov; A. K. Geim

首页> 外文期刊>Physical review >Infrared spectroscopy of electronic bands in bilayer graphene

【24h】

Infrared spectroscopy of electronic bands in bilayer graphene

机译：双层石墨烯中电子带的红外光谱

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight-binding calculations. All major spectral features corresponding to the expected interband transitions are identified in the spectra: a strong peak due to transitions between parallel split-off bands and two onset-like features due to transitions between valence and conduction bands. A strong gate voltage dependence of these structures and a significant electron-hole asymmetry are observed that we use to extract several band parameters. The structures related to the gate-induced band gap are less pronounced in the experiment than predicted by the tight-binding model that uses parameters obtained from previous experiments on graphite and recent self-consistent band-gap calculations.

机译：我们介绍了静电门控双层石墨烯的红外光谱（0.1-1 eV）作为掺杂的函数，并将其与紧密结合计算进行了比较。在光谱中标识了与预期的带间跃迁相对应的所有主要频谱特征：由于平行分离带之间的跃迁而产生的强峰，以及由于价带和导带之间的跃迁而引起的两个类似发作的特征。观察到这些结构对栅极电压的强烈依赖性以及明显的电子-空穴不对称性，可用于提取多个能带参数。与栅极感应带隙相关的结构在实验中不如紧密绑定模型所预测的那样紧密，紧密绑定模型使用从先前的石墨实验和最近的自洽带隙计算中获得的参数。

著录项

来源
《Physical review》 |2009年第11期|1120-1124|共5页
作者
A. B. Kuzmenko; E. van Heumen; D. van der Marel; P. Lerch; P. Blake; K. S. Novoselov; A. K. Geim;
展开▼
作者单位

Department de Physique de la Matiere Condensee, Universite de Geneve, CH-1211 Geneve 4, Switzerland;

Department de Physique de la Matiere Condensee, Universite de Geneve, CH-1211 Geneve 4, Switzerland;

Department de Physique de la Matiere Condensee, Universite de Geneve, CH-1211 Geneve 4, Switzerland;

Paul Scherrer Institute, Villigen 5232, Switzerland;

Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom;

Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom;

Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
fullerenes and related materials; optical properties of bulk materials and thin films; multilayers; superlattices; metals; semimetals; and alloys;

机译：富勒烯及相关物质;散装材料和薄膜的光学性能;多层超晶格金属;半金属和合金;

相似文献

外文文献
中文文献
专利

1. Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy [J] . Kin Fai Mak, Chun Hung Lui, Jie Shan, Physical review letters . 2009,第25期

机译：双层石墨烯中电场感应带隙的红外光谱观察
2. Determination of the gate-tunable band gap and tight-binding parameters in bilayer graphene using infrared spectroscopy [J] . A. B. Kuzmenko, I. Crassee, D. van der Marel, Physical review . 2009,第16期

机译：红外光谱法测定双层石墨烯中的门可调带隙和紧密结合参数
3. Band Structure Asymmetry Of Bilayer Graphene Revealed By Infrared Spectroscopy [J] . Z. Q. Li, E. A. Henriksen, Z. Jiang, Physical review letters . 2009,第3期

机译：红外光谱显示双层石墨烯的能带结构不对称性
4. Band Gap Calculations of Bilayer Graphene and Bilayer Armchair Graphene Nanoribbon [C] . E.Sustini, Khairurrijal, F.A.Noor International Conference on Advanced Materials Science and Technology . 2018

机译：双层石墨烯和双层扶手椅石墨烯纳米带隙计算
5. Electronic band structure effects in monolayer, bilayer, and hybrid graphene structures. [D] . Puls, Conor. 2012

机译：电子带结构影响单层，双层和杂化石墨烯结构。
6. Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene [O] . Kyu Won Lee, Cheol Eui Lee -1

机译：滑动双层石墨烯中电场带隙对电子拓扑跃迁的极端敏感性
7. Infrared spectroscopy of electronic bands in bilayer graphene [O] . Kuzmenko, Alexey, Van Heumen, Erik, Van Der Marel, Dirk, 2009

机译：双层石墨烯中电子带的红外光谱

Infrared spectroscopy of electronic bands in bilayer graphene

摘要

著录项

相似文献

相关主题

期刊订阅