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机译:稀磁性铁电氧化物中的铁磁性和交换偏压
Department of Physics and State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China;
Department of Physics and State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China;
Department of Physics and State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China;
Department of Physics and State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China;
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
magnetic semiconductors; magnetic properties of monolayers and thin films;
机译:“铁磁性/反磁性双层中交换偏压的厚度和角度依赖性” [J.应用物理92,1009(2002)]和“与反铁磁层耦合的铁磁层中交换偏压和矫顽力的厚度依赖性”
机译:外延铁电-铁磁界面的外来交换偏压
机译:外延铁电-铁磁界面的外来交换偏压
机译:非磁性和稀磁氧化物中的表面铁磁性
机译:稀磁性半导体(砷,镓,锰)中的铁磁和交换偏压研究。
机译:FeNi / FeMn双层中由旋转各向异性驱动的全向零场铁磁共振无交换偏置
机译:响应铁磁/反铁磁性双层交换偏置厚度和角度依赖性的“评论”J。苹果。物理。 92,1009(2002)和“交换偏压的厚度依赖性和矫顽力与反铁磁层的铁磁层”J.苹果。物理。 94,2529(2003)“