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Electronic structure of La_2CuO_4 in the T and T' crystal structures using dynamical mean field theory

机译:动力学平均场理论在T和T'晶体结构中La_2CuO_4的电子结构

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摘要

Using Nth order muffin-tin-orbital-based downfolding technique in combination with dynamical mean field theory, we investigate the correlated electronic structure of La_2CuO_4 in the so-called "T" and "T" crystal structure which serve as the parent compounds for the hole-doped and electron-doped high T_c compounds. La_2CuO_4, which naturally forms in T structure, has been reported to made to form in V structure by means of special thin-film synthesis technique of replacing La by isovalent RE (RE=Y,Lu,Sm,Gd...) ions [A. Tsukada et al, Solid State Commun. 133, 427 (2005)]. The experimental studies on T' -structured La_2CuO_4 reveal contrasting properties to that in T structure, which we examine by means of electronic structure calculations. Our dynamical mean field calculations show introduction of correlation effect to the one-electron band structure of T'- and T-structured La_2CuO_4, providing metallic solution in one case (V) and insulating solution to another (T).
机译:利用基于N阶松饼-锡-轨道的向下折叠技术,结合动态平均场理论,我们研究了La_2CuO_4在所谓的“ T”和“ T”晶体结构中的相关电子结构,这些晶体结构是该化合物的母体。空穴掺杂和电子掺杂的高T_c化合物。据报道,天然形成为T结构的La_2CuO_4通过特殊的薄膜合成技术以等价RE(RE = Y,Lu,Sm,Gd ...)离子替代La [V]形成了V结构。一个。 Tsukada等人,《固态公报》。 133,427(2005)]。 T'结构的La_2CuO_4的实验研究表明与T结构具有相反的特性,我们将通过电子结构计算来检验这些特性。我们的动态平均场计算表明,在T'和T结构的La_2CuO_4的单电子能带结构中引入了相关效应,在一种情况(V)中提供了金属溶液,而在另一种情况(T)中提供了绝缘溶液。

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  • 来源
    《Physical review》 |2009年第13期|928-932|共5页
  • 作者单位

    Department of Material Sciences, S. N. Bose National Center for Basic Sciences, JD-III, Salt Lake City, Kolkata 700 098, India;

    Department of Material Sciences, S. N. Bose National Center for Basic Sciences, JD-III, Salt Lake City, Kolkata 700 098, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    La-based cuprates;

    机译:镧基铜;

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