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首页> 外文期刊>Physical review >Electronic structure studies of BaFe_2As_2 by angle-resolved photoemission spectroscopy
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Electronic structure studies of BaFe_2As_2 by angle-resolved photoemission spectroscopy

机译：角度分辨光发射光谱法研究BaFe_2As_2的电子结构

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摘要

We report high resolution angle-resolved photoemission spectroscopy (ARPES) studies of the electronic structure of BaFe_2As_2, which is one of the parent compounds of the Fe-pnictide superconductors. ARPES measurements have been performed at 20 and 300 K, corresponding to the orthorhombic antiferromagnetic phase and the tetragonal paramagnetic phase, respectively. Photon energies between 30 and 175 eV and polarizations parallel and perpendicular to the scattering plane have been used. Measurements of the Fermi surface yield two hole pockets at the Γ point and an electron pocket at each of the X points. The topology of the pockets has been concluded from the dispersion of the spectral weight as a function of binding energy. Changes in the spectral weight at the Fermi level upon variation in the polarization of the incident photons yield important information on the orbital character of the states near the Fermi level. No differences in the electronic structure between 20 and 300 K could be resolved. The results are compared with density functional theory band structure calculations for the tetragonal paramagnetic phase.
机译：我们报告了高分辨率的角度分辨光电子能谱（ARPES）研究BaFe_2As_2的电子结构，BaFe_2As_2是Fe肽超导体的母体化合物之一。 ARPES测量分别在20 K和300 K下进行，分别对应于正交各向异性的反铁磁性相和四方顺磁性相。已经使用了介于30和175 eV之间的光子能量以及平行于和垂直于散射平面的极化。费米表面的测量会在Γ点产生两个空穴，在每个X点产生一个电子空穴。口袋的拓扑结构是由光谱重量的分散作为结合能的函数得出的。当入射光子的极化发生变化时，费米能级上光谱权重的变化会产生有关费米能级附近状态的轨道特性的重要信息。无法解决20到300 K之间的电子结构差异。将结果与四边形顺磁性相的密度泛函理论能带结构计算进行了比较。

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  • 来源
    《Physical review》 |2009年第15期|279-288|共10页
  • 作者

    J. Fink; S. Thirupathaiah; R. Ovsyannikov; H. A. Duerr; R. Follath; Y. Huang; S. de Jong; M. S. Golden; Yu-Zhong Zhang; H. O. Jeschke; R. Valenti; C. Felser; S. Dastjani Farahani; M. Rotter; D. Johrendt;

  • 作者单位

    Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, 12489 Berlin, Germany Leibniz-Institute for Solid State and Materials Research Dresden, P.O. Box 270116, D-01171 Dresden, Germany;

    Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, 12489 Berlin, Germany;

    Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, 12489 Berlin, Germany;

    Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, 12489 Berlin, Germany;

    Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, 12489 Berlin, Germany;

    Van der Waals-Zeeman Institute, University of Amsterdam, NL-1018XE Amsterdam, The Netherlands;

    Van der Waals-Zeeman Institute, University of Amsterdam, NL-1018XE Amsterdam, The Netherlands;

    Van der Waals-Zeeman Institute, University of Amsterdam, NL-1018XE Amsterdam, The Netherlands;

    Institut fuer Theoretische Physik, J. W. Goethe-Universitaet Frankfurt, Max-von-Laue-Strasse 1, 60438 Frankfurt,Germany;

    Institut fuer Theoretische Physik, J. W. Goethe-Universitaet Frankfurt, Max-von-Laue-Strasse 1, 60438 Frankfurt,Germany;

    Institut fuer Theoretische Physik, J. W. Goethe-Universitaet Frankfurt, Max-von-Laue-Strasse 1, 60438 Frankfurt,Germany;

    Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz, Germany;

    Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz, Germany;

    Department Chemie und Biochemie, Ludwig-Maximilians-Universitaet Muenchen, 81377 Muenchen, Germany;

    Department Chemie und Biochemie, Ludwig-Maximilians-Universitaet Muenchen, 81377 Muenchen, Germany;

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  • 关键词

    superconducting materials; electronic structure; photoemission and photoelectron spectra; electron density of states and band structure of crystalline solids;

    机译：超导材料;电子结构光发射和光电子光谱;态固体的电子密度和能带结构;

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