Ab initio calculation of transverse spin current in gFaphene nanostructures

Bin Wang; Jian Wang; Hong Guo

首页> 外文期刊>Physical review >Ab initio calculation of transverse spin current in gFaphene nanostructures

【24h】

Ab initio calculation of transverse spin current in gFaphene nanostructures

机译：从头算计算gFaphene纳米结构中的横向自旋电流

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report a theoretical analysis of transverse spin current in a four-probe graphene nanostructure in the absence of spin-orbit interaction and magnetic field. The nanostructure consists of a finite-size graphene sheet connected to the outside world by two zigzag graphene nanoribbons (GNR) and two armchair graphene nanoribbons, forming a cross-shaped two-dimensional device. Due to edge state induced magnetism at zigzag GNR boundaries, our result shows that a pure transverse spin current without an accompanying charge current is induced. We have calculated the transverse spin conductance by an atomic first-principles method where density-functional theory is carried out within the Keldysh nonequilibrium Green's function framework.

机译：我们报告了在不存在自旋轨道相互作用和磁场的情况下，四探针石墨烯纳米结构中的横向自旋电流的理论分析。纳米结构由通过两个之字形石墨烯纳米带（GNR）和两个扶手椅状石墨烯纳米带连接到外部的有限尺寸的石墨烯片组成，形成一个十字形的二维器件。由于之字形GNR边界处的边缘态感应磁性，我们的结果表明，感应出了纯横向旋转电流而没有伴随的充电电流。我们已经通过原子第一原理方法计算了横向自旋电导，该方法在Keldysh非平衡格林函数框架内进行了密度泛函理论。

著录项

来源
《Physical review》 |2009年第16期|732-736|共5页
作者
Bin Wang; Jian Wang; Hong Guo;
展开▼
作者单位

Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China;

Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China;

Department of Physics and Center for the Physics of Materials, McGill University, Montreal, Quebec, Canada H3A 2T8;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
nanoelectronic devices; density functional theory; local density approximation; gradient and other corrections; electronic transport in nanoscale materials and structures; carbon; diamond; graphite;

机译：纳米电子器件;密度泛函理论;局部密度近似;梯度和其他校正;纳米材料和结构中的电子传输;碳;钻石;石墨;

相似文献

外文文献
中文文献
专利

1. Semiconductor-homojunction induction in single-crystal GaN nanostructures under a transverse electric field: Ab initio calculations [J] . Hulusi Yilmaz, Brad R. Weiner, Gerardo Morell Physical review . 2010,第4期

机译：横向电场下单晶GaN纳米结构中的半导体同质结感应：从头算
2. Theoretical tools for the conformational study of spin labelled neoglycolipids: ab initio spin density calculations and development of MM2 parameters [J] . Istvan Komaromi, Jean M. J. Tronchet Journal of Molecular Structure. Theochem: Applications of Theoretical Chemistry to Organic, Inorganic and Biological Problems . 1997,第0期

机译：用于自旋标记新糖脂构象研究的理论工具：从头算自旋密度计算和MM2参数的发展
3. Ab initio electron propagator calculations of transverse conduction through DNA nucleotide bases in 1-nm nanopore corroborate third generation sequencing [J] . Kletsov Aleksey A., Glukhovskoy Evgeny G., Chumakov Aleksey S., Biochimica et Biophysica Acta. General Subjects . 2016,第1aPta1期

机译：从头算电子传播子在1nm纳米孔中通过DNA核苷酸碱基进行横向传导的计算证实了第三代测序
4. Ab-initio Calculations of the Vibrational Properties of Nanostructures [C] . Gabriel Bester, Peng Han Annual results and review workshop on high performance computing in science and engineering . 2012

机译：从头算计算纳米结构的振动特性
5. Raman optical activity: Theory, instrumentation and measurements. Electron transition current density: Ab initio calculation of vibrational transition current density in selected molecules. [D] . Lee, Eunah. 2000

机译：拉曼光学活性：理论，仪器和测量。电子跃迁电流密度：所选分子中振动跃迁电流密度的从头算。
6. Stable GaSe-Like Phosphorus Carbide Monolayer with Tunable Electronic and Optical Properties from Ab Initio Calculations [O] . Xiaolin Cai, Zhili Zhu, Weiyang Yu, 2018

机译：从头算算起具有可调电子和光学性质的稳定的GaSe样碳化钨单层
7. Ab initio calculation of transverse spin current in graphene nanostructures [O] . Wang J, Guo H, Wang B 2009

机译：从头计算石墨烯纳米结构中的横向自旋电流

Ab initio calculation of transverse spin current in gFaphene nanostructures

摘要

著录项

相似文献

相关主题

期刊订阅